All MOSFET. AFN7402 Datasheet

 

AFN7402 Datasheet and Replacement


   Type Designator: AFN7402
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-323
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AFN7402 Datasheet (PDF)

 ..1. Size:573K  alfa-mos
 afn7402.pdf pdf_icon

AFN7402

AFN7402 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7402, N-Channel enhancement mode 20V/3.6A,RDS(ON)=60m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=90m@VGS=1.8V These devices are particularly suited for low Supe

 8.1. Size:569K  alfa-mos
 afn7400.pdf pdf_icon

AFN7402

AFN7400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7400, N-Channel enhancement mode 30V/3.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=90m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=102m@VGS=2.5V These devices are particularly suited for low Supe

 9.1. Size:583K  alfa-mos
 afn7420.pdf pdf_icon

AFN7402

AFN7420 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7420, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.2. Size:553K  alfa-mos
 afn7412.pdf pdf_icon

AFN7402

AFN7412 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7412, N-Channel enhancement mode 20V/3.8A,RDS(ON)=52m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=56m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=68m@VGS=1.8V These devices are particularly suited for low Supe

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Keywords - AFN7402 MOSFET datasheet

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