AFN8918 Todos los transistores

 

AFN8918 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN8918
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SOT-89
 

 Búsqueda de reemplazo de AFN8918 MOSFET

   - Selección ⓘ de transistores por parámetros

 

AFN8918 Datasheet (PDF)

 ..1. Size:688K  alfa-mos
 afn8918.pdf pdf_icon

AFN8918

AFN8918 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8918, N-Channel enhancement mode 40V/4.6A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)=54m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:694K  alfa-mos
 afn8988.pdf pdf_icon

AFN8918

AFN8988 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:397K  alfa-mos
 afn8987.pdf pdf_icon

AFN8918

AFN8987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.3. Size:683K  alfa-mos
 afn8987w.pdf pdf_icon

AFN8918

AFN8987W Alfa-MOS 80V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

MOSTRAR MÁS

Otros transistores... AFN8439 , AFN8471 , AFN8495 , AFN8816 , AFN8822 , AFN8822S , AFN8832 , AFN8904 , 10N65 , AFN8936 , AFN8968 , AFN8987 , AFN8987W , AFN8988 , AFN8988W , AFN9530 , AFN9910 .

History: SM4953K | QM3009K | SPC16N65G | IPB530N15N3G | SEF40604 | IRFU3704Z | CMI100N04

 

 
Back to Top

 


 
.