AFN8918
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFN8918
Marking Code: 18*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 4.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
SOT-89
AFN8918
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFN8918
Datasheet (PDF)
..1. Size:688K alfa-mos
afn8918.pdf 
AFN8918 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8918, N-Channel enhancement mode 40V/4.6A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)=54m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.1. Size:694K alfa-mos
afn8988.pdf
AFN8988 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.2. Size:397K alfa-mos
afn8987.pdf
AFN8987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
9.3. Size:683K alfa-mos
afn8987w.pdf
AFN8987W Alfa-MOS 80V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
9.4. Size:713K alfa-mos
afn8936.pdf
AFN8936 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m@VGS=3.3V These devices are particularly suited for low Super
9.5. Size:695K alfa-mos
afn8988w.pdf
AFN8988W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit
9.6. Size:688K alfa-mos
afn8904.pdf
AFN8904 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.7. Size:670K alfa-mos
afn8968.pdf
AFN8968 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8968, N-Channel enhancement mode 100V/3.0A,RDS(ON)=300m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/2.0A,RDS(ON)=310m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
Datasheet: AFN8439
, AFN8471
, AFN8495
, AFN8816
, AFN8822
, AFN8822S
, AFN8832
, AFN8904
, 7N60
, AFN8936
, AFN8968
, AFN8987
, AFN8987W
, AFN8988
, AFN8988W
, AFN9530
, AFN9910
.
