AFN8988W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFN8988W
Código: 88*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.45 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 4.6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 12 nC
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 90 pF
Resistencia entre drenaje y fuente RDS(on): 0.13 Ohm
Paquete / Cubierta: SOT-89
Búsqueda de reemplazo de MOSFET AFN8988W
AFN8988W Datasheet (PDF)
afn8988w.pdf
AFN8988W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit
afn8988.pdf
AFN8988 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn8987.pdf
AFN8987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn8987w.pdf
AFN8987W Alfa-MOS 80V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
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