AFN8988W Datasheet. Specs and Replacement

Type Designator: AFN8988W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT-89

  📄📄 Copy 

AFN8988W substitution

- MOSFET ⓘ Cross-Reference Search

 

AFN8988W datasheet

 ..1. Size:695K  alfa-mos
 afn8988w.pdf pdf_icon

AFN8988W

AFN8988W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit... See More ⇒

 7.1. Size:694K  alfa-mos
 afn8988.pdf pdf_icon

AFN8988W

AFN8988 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited... See More ⇒

 8.1. Size:397K  alfa-mos
 afn8987.pdf pdf_icon

AFN8988W

AFN8987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

 8.2. Size:683K  alfa-mos
 afn8987w.pdf pdf_icon

AFN8988W

AFN8987W Alfa-MOS 80V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

SHOW MORE

Detailed specifications: AFN8832, AFN8904, AFN8918, AFN8936, AFN8968, AFN8987, AFN8987W, AFN8988, RFP50N06, AFN9530, AFN9910, AFN9971, AFN9971B, AFN9972S, AFN9977, AFN9987, AFN9995S

Keywords - AFN8988W MOSFET specs

 AFN8988W cross reference

 AFN8988W equivalent finder

 AFN8988W pdf lookup

 AFN8988W substitution

 AFN8988W replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs