AFN9971 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AFN9971 Datasheet (PDF)

..1. Size:857K alfa-mos
afn9971.pdf pdf_icon

AFN9971 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

0.1. Size:876K alfa-mos
afn9971b.pdf pdf_icon

AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

8.1. Size:773K alfa-mos
afn9977.pdf pdf_icon

AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9977, N-Channel enhancement mode 60V/8A,RDS(ON)= 118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)= 130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

8.2. Size:848K alfa-mos
afn9972s.pdf pdf_icon

AFN9972S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9972S, N-Channel enhancement mode 60V/35A,RDS(ON)= 15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)= 18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

Otros transistores... AFN8936 , AFN8968 , AFN8987 , AFN8987W , AFN8988 , AFN8988W , AFN9530 , AFN9910 , 75N75 , AFN9971B , AFN9972S , AFN9977 , AFN9987 , AFN9995S , AFN9997 , AFP1013 , AFP1023 .