AFN9971 Todos los transistores

 

AFN9971 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN9971
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: TO-252
 

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AFN9971 Datasheet (PDF)

 ..1. Size:857K  alfa-mos
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AFN9971

AFN9971 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 0.1. Size:876K  alfa-mos
 afn9971b.pdf pdf_icon

AFN9971

AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 8.1. Size:773K  alfa-mos
 afn9977.pdf pdf_icon

AFN9971

AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9977, N-Channel enhancement mode 60V/8A,RDS(ON)= 118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)= 130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 8.2. Size:848K  alfa-mos
 afn9972s.pdf pdf_icon

AFN9971

AFN9972S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9972S, N-Channel enhancement mode 60V/35A,RDS(ON)= 15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)= 18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

MOSTRAR MÁS

Otros transistores... AFN8936 , AFN8968 , AFN8987 , AFN8987W , AFN8988 , AFN8988W , AFN9530 , AFN9910 , 75N75 , AFN9971B , AFN9972S , AFN9977 , AFN9987 , AFN9995S , AFN9997 , AFP1013 , AFP1023 .

History: AP3N4R0H | NCE60N2K1R | SE20075

 

 
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