AFN9971
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFN9971
Marking Code: 9971
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 85
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042
Ohm
Package:
TO-252
AFN9971
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFN9971
Datasheet (PDF)
..1. Size:857K alfa-mos
afn9971.pdf
AFN9971 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo
0.1. Size:876K alfa-mos
afn9971b.pdf
AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for
8.1. Size:773K alfa-mos
afn9977.pdf
AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9977, N-Channel enhancement mode 60V/8A,RDS(ON)= 118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)= 130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo
8.2. Size:848K alfa-mos
afn9972s.pdf
AFN9972S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9972S, N-Channel enhancement mode 60V/35A,RDS(ON)= 15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)= 18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for
Datasheet: AFN8936
, AFN8968
, AFN8987
, AFN8987W
, AFN8988
, AFN8988W
, AFN9530
, AFN9910
, K2611
, AFN9971B
, AFN9972S
, AFN9977
, AFN9987
, AFN9995S
, AFN9997
, AFP1013
, AFP1023
.