AFN9977 Todos los transistores

 

AFN9977 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN9977
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.118 Ohm
   Paquete / Cubierta: TO-252
 

 Búsqueda de reemplazo de AFN9977 MOSFET

   - Selección ⓘ de transistores por parámetros

 

AFN9977 Datasheet (PDF)

 ..1. Size:773K  alfa-mos
 afn9977.pdf pdf_icon

AFN9977

AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9977, N-Channel enhancement mode 60V/8A,RDS(ON)= 118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)= 130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 8.1. Size:876K  alfa-mos
 afn9971b.pdf pdf_icon

AFN9977

AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 8.2. Size:857K  alfa-mos
 afn9971.pdf pdf_icon

AFN9977

AFN9971 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 8.3. Size:848K  alfa-mos
 afn9972s.pdf pdf_icon

AFN9977

AFN9972S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9972S, N-Channel enhancement mode 60V/35A,RDS(ON)= 15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)= 18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

MOSTRAR MÁS

Otros transistores... AFN8987W , AFN8988 , AFN8988W , AFN9530 , AFN9910 , AFN9971 , AFN9971B , AFN9972S , IRFB31N20D , AFN9987 , AFN9995S , AFN9997 , AFP1013 , AFP1023 , AFP1033 , AFP1073 , AFP1303 .

History: NCE85H21C | NTJS4405NT1 | SHD225628

 

 
Back to Top

 


 
.