AFN9977 Datasheet. Specs and Replacement

Type Designator: AFN9977  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.118 Ohm

Package: TO-252

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AFN9977 datasheet

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AFN9977

AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9977, N-Channel enhancement mode 60V/8A,RDS(ON)= 118m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)= 130m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo... See More ⇒

 8.1. Size:876K  alfa-mos
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AFN9977

AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for ... See More ⇒

 8.2. Size:857K  alfa-mos
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AFN9977

AFN9971 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo... See More ⇒

 8.3. Size:848K  alfa-mos
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AFN9977

AFN9972S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9972S, N-Channel enhancement mode 60V/35A,RDS(ON)= 15m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)= 18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for ... See More ⇒

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Detailed specifications: AFN8987W, AFN8988, AFN8988W, AFN9530, AFN9910, AFN9971, AFN9971B, AFN9972S, IRF2807, AFN9987, AFN9995S, AFN9997, AFP1013, AFP1023, AFP1033, AFP1073, AFP1303

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