AFP2301A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFP2301A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 223 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: SOT-23

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AFP2301A datasheet

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AFP2301A

AFP2301A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 0.1. Size:651K  alfa-mos
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AFP2301A

AFP2301AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

 7.1. Size:519K  alfa-mos
 afp2301s.pdf pdf_icon

AFP2301A

AFP2301S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 7.2. Size:519K  alfa-mos
 afp2301.pdf pdf_icon

AFP2301A

AFP2301 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=155m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su

MOSTRAR MÁS

Otros transistores... AFP1033, AFP1073, AFP1303, AFP1413, AFP1433, AFP1810, AFP1913, AFP2301, IRF830, AFP2301AS, AFP2301S, AFP2303, AFP2303A, AFP2307A, AFP2309, AFP2309A, AFP2311