AFP2309 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFP2309  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.305 Ohm

Encapsulados: SOT-23

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AFP2309 datasheet

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AFP2309

AFP2309 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.4A,RDS(ON)=320m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 0.1. Size:693K  alfa-mos
 afp2309a.pdf pdf_icon

AFP2309

AFP2309A Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.6A,RDS(ON)=320m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 8.1. Size:709K  alfa-mos
 afp2307a.pdf pdf_icon

AFP2309

AFP2307A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2307A, P-Channel enhancement mode -20V/-1.2A, RDS(ON)= 520 m @ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-1.0A, RDS(ON)= 870 m @ VGS =-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are par

 8.2. Size:696K  alfa-mos
 afp2303a.pdf pdf_icon

AFP2309

AFP2303A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=145m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=180m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

MOSTRAR MÁS

Otros transistores... AFP1913, AFP2301, AFP2301A, AFP2301AS, AFP2301S, AFP2303, AFP2303A, AFP2307A, EMB04N03H, AFP2309A, AFP2311, AFP2311A, AFP2317, AFP2319A, AFP2319AS, AFP2323, AFP2323A