All MOSFET. AFP2309 Datasheet

 

AFP2309 MOSFET. Datasheet pdf. Equivalent

Type Designator: AFP2309

Marking Code: 09*

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 1.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 2.7 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 25 pF

Maximum Drain-Source On-State Resistance (Rds): 0.305 Ohm

Package: SOT-23

AFP2309 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFP2309 Datasheet (PDF)

1.1. afp2309.pdf Size:561K _upd-mosfet

AFP2309
AFP2309

AFP2309 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.4A,RDS(ON)=320mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

1.2. afp2309a.pdf Size:693K _upd-mosfet

AFP2309
AFP2309

AFP2309A Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.6A,RDS(ON)=320mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 4.1. afp2301a.pdf Size:651K _upd-mosfet

AFP2309
AFP2309

AFP2301A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

4.2. afp2303a.pdf Size:696K _upd-mosfet

AFP2309
AFP2309

AFP2303A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=180mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 4.3. afp2301as.pdf Size:651K _upd-mosfet

AFP2309
AFP2309

AFP2301AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

4.4. afp2301.pdf Size:519K _upd-mosfet

AFP2309
AFP2309

AFP2301 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=155mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su

 4.5. afp2301s.pdf Size:519K _upd-mosfet

AFP2309
AFP2309

AFP2301S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

4.6. afp2307a.pdf Size:709K _upd-mosfet

AFP2309
AFP2309

AFP2307A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2307A, P-Channel enhancement mode -20V/-1.2A, RDS(ON)= 520 mΩ@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-1.0A, RDS(ON)= 870 mΩ@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are par

4.7. afp2303.pdf Size:564K _upd-mosfet

AFP2309
AFP2309

AFP2303 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=130mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=170mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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