AFP2309 Datasheet. Specs and Replacement

Type Designator: AFP2309  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.305 Ohm

Package: SOT-23

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AFP2309 datasheet

 ..1. Size:561K  alfa-mos
 afp2309.pdf pdf_icon

AFP2309

AFP2309 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.4A,RDS(ON)=320m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui... See More ⇒

 0.1. Size:693K  alfa-mos
 afp2309a.pdf pdf_icon

AFP2309

AFP2309A Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.6A,RDS(ON)=320m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒

 8.1. Size:709K  alfa-mos
 afp2307a.pdf pdf_icon

AFP2309

AFP2307A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2307A, P-Channel enhancement mode -20V/-1.2A, RDS(ON)= 520 m @ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-1.0A, RDS(ON)= 870 m @ VGS =-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are par... See More ⇒

 8.2. Size:696K  alfa-mos
 afp2303a.pdf pdf_icon

AFP2309

AFP2303A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=145m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=180m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly... See More ⇒

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Detailed specifications: AFP1913, AFP2301, AFP2301A, AFP2301AS, AFP2301S, AFP2303, AFP2303A, AFP2307A, AO4407, AFP2309A, AFP2311, AFP2311A, AFP2317, AFP2319A, AFP2319AS, AFP2323, AFP2323A

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