IRLU120A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLU120A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 35 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 10.2 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 90 pF
Resistencia entre drenaje y fuente RDS(on): 0.22 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MOSFET IRLU120A
IRLU120A Datasheet (PDF)
irlr120a irlu120a.pdf
IRLR/U120AFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.176 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ratings
irlu120n.pdf
PD - 91541BIRLR/U120NHEXFET Power MOSFET Surface Mount (IRLR120N)D Straight Lead (IRLU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.185 Fully Avalanche RatedGDescription ID = 10ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Th
irlr120pbf irlu120pbf.pdf
PD- 95382AIRLR120PbFIRLU120PbF Lead-Free12/07/04Document Number: 91324 www.vishay.com1IRLR/U120PbFDocument Number: 91324 www.vishay.com2IRLR/U120PbFDocument Number: 91324 www.vishay.com3IRLR/U120PbFDocument Number: 91324 www.vishay.com4IRLR/U120PbFDocument Number: 91324 www.vishay.com5IRLR/U120PbFDocument Number: 91324 www.vishay.com6IRLR/U12
irlr120npbf irlu120npbf.pdf
PD - 95082AIRLR/U120NPbFHEXFET Power MOSFETl Surface Mount (IRLR120N)l Straight Lead (IRLU120N)Dl Advanced Process TechnologyVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.185l Lead-FreeGDescription ID = 10ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance
irlr120 irlu120 sihlr120 sihlu120.pdf
IRLR120, IRLU120, SiHLR120, SiHLU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 5.0 V 0.27 Dynamic dV/dt RatingQg (Max.) (nC) 12 Repetitive Avalanche Rated Surface Mount (IRLR120, SiHLR120)Qgs (nC) 3.0 Straight Lead (IRLU120, SiHLU120)Qgd (nC) 7.1 Available in
irlr120npbf irlu120npbf.pdf
IRLR120NPbFIRLU120NPbFHEXFET Power MOSFETl Surface Mount (IRLR120N)l Straight Lead (IRLU120N)Dl Advanced Process TechnologyVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.185l Lead-FreeGDescriptionFifth Generation HEXFETs from International Rectifier utilize ID = 10ASadvanced processing techniques to achieve the lowest possibleon-resistance pe
irlu120n.pdf
isc N-Channel MOSFET Transistor IRLU120NFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Otros transistores... IRLU010 , IRLU014 , IRLU014A , IRLU020 , IRLU024 , IRLU024A , IRLU024N , IRLU110A , MDF11N65B , IRLU120N , IRLU130A , IRLU210A , IRLU220A , IRLU230A , IRLU2703 , IRLU2705 , IRLU2905 .
