IRLU120A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLU120A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Paquete / Cubierta: TO251
- Selección de transistores por parámetros
IRLU120A Datasheet (PDF)
irlr120a irlu120a.pdf

IRLR/U120AFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.176 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ratings
irlu120n.pdf

PD - 91541BIRLR/U120NHEXFET Power MOSFET Surface Mount (IRLR120N)D Straight Lead (IRLU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.185 Fully Avalanche RatedGDescription ID = 10ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Th
irlr120pbf irlu120pbf.pdf

PD- 95382AIRLR120PbFIRLU120PbF Lead-Free12/07/04Document Number: 91324 www.vishay.com1IRLR/U120PbFDocument Number: 91324 www.vishay.com2IRLR/U120PbFDocument Number: 91324 www.vishay.com3IRLR/U120PbFDocument Number: 91324 www.vishay.com4IRLR/U120PbFDocument Number: 91324 www.vishay.com5IRLR/U120PbFDocument Number: 91324 www.vishay.com6IRLR/U12
irlr120npbf irlu120npbf.pdf

IRLR120NPbFIRLU120NPbFHEXFET Power MOSFETl Surface Mount (IRLR120N)l Straight Lead (IRLU120N)Dl Advanced Process TechnologyVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.185l Lead-FreeGDescriptionFifth Generation HEXFETs from International Rectifier utilize ID = 10ASadvanced processing techniques to achieve the lowest possibleon-resistance pe
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: HMS15N60 | FDN338 | SSF26NS60 | 2SK3107C | SI4914DY | 2SJ557A | S10H12S
History: HMS15N60 | FDN338 | SSF26NS60 | 2SK3107C | SI4914DY | 2SJ557A | S10H12S



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