AFP4435 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFP4435
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: SOP-8P
Búsqueda de reemplazo de AFP4435 MOSFET
AFP4435 Datasheet (PDF)
afp4435.pdf
AFP4435 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435, P-Channel enhancement mode -30V/-10A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afp4435s.pdf
AFP4435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afp4435ws.pdf
AFP4435WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite
afp4435w.pdf
AFP4435W Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=30m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit
Otros transistores... AFP3481S , AFP3485 , AFP3497 , AFP3679S , AFP3804 , AFP3981 , AFP3993 , AFP4403 , 12N60 , AFP4435S , AFP4435W , AFP4435WS , AFP4447 , AFP4535 , AFP4535W , AFP4599W , AFP4637 .
History: CS100N03B4 | 2SJ506S
History: CS100N03B4 | 2SJ506S
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