AFP4925S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AFP4925S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: SOP-8P

Búsqueda de reemplazo de MOSFET AFP4925S

AFP4925S Datasheet (PDF)

..1. Size:589K alfa-mos
afp4925s.pdf

AFP4925S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925S, P-Channel enhancement mode -30V/ -7.5A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -6.0A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

7.1. Size:499K alfa-mos
afp4925.pdf

AFP4925 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925, P-Channel enhancement mode -30V/ -7.2A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -5.8A,RDS(ON)=37m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

7.2. Size:564K alfa-mos
afp4925w.pdf

AFP4925W Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925W, P-Channel enhancement mode -30V/ -7.2A,RDS(ON)=30m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -5.8A,RDS(ON)=36m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

7.3. Size:589K alfa-mos
afp4925ws.pdf

AFP4925WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925WS, P-Channel enhancement mode -30V/ -8.0A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -6.0A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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