AFP4953WS Datasheet. Equivalente

 ..1. Size:593K  alfa-mos
 afp4953ws.pdf

AFP4953WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFS4953WS, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=80m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 7.1. Size:593K  alfa-mos
 afp4953s.pdf

AFP4953S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4953S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=52m @VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=76m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 9.1. Size:505K  alfa-mos
 afp4943ws.pdf

AFP4943WS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4943WS, P-Channel enhancement mode -20V/ -9.0A,RDS(ON)=25m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/ -7.0A,RDS(ON)=32m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/ -3.0A,RDS(ON)=38m @VGS=-1.8V These devices are particularly suited

 9.2. Size:494K  alfa-mos
 afp4948.pdf

AFP4948 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4948, P-Channel enhancement mode -60V/-4.0A,RDS(ON)= 100m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.0A,RDS(ON)= 120m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.3. Size:589K  alfa-mos
 afp4925s.pdf

AFP4925S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925S, P-Channel enhancement mode -30V/ -7.5A,RDS(ON)=18m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -6.0A,RDS(ON)=26m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 9.4. Size:499K  alfa-mos
 afp4925.pdf

AFP4925 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925, P-Channel enhancement mode -30V/ -7.2A,RDS(ON)=28m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -5.8A,RDS(ON)=37m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 9.5. Size:564K  alfa-mos
 afp4925w.pdf

AFP4925W Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925W, P-Channel enhancement mode -30V/ -7.2A,RDS(ON)=30m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -5.8A,RDS(ON)=36m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 9.6. Size:589K  alfa-mos
 afp4925ws.pdf

AFP4925WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925WS, P-Channel enhancement mode -30V/ -8.0A,RDS(ON)=18m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -6.0A,RDS(ON)=26m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly