AFP4953WS Datasheet. Specs and Replacement

Type Designator: AFP4953WS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOP-8P

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AFP4953WS datasheet

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AFP4953WS

AFP4953WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFS4953WS, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=80m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui... See More ⇒

 7.1. Size:593K  alfa-mos
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AFP4953WS

AFP4953S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4953S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=52m @VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=76m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite... See More ⇒

 9.1. Size:505K  alfa-mos
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AFP4953WS

AFP4943WS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4943WS, P-Channel enhancement mode -20V/ -9.0A,RDS(ON)=25m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/ -7.0A,RDS(ON)=32m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/ -3.0A,RDS(ON)=38m @VGS=-1.8V These devices are particularly suited... See More ⇒

 9.2. Size:494K  alfa-mos
 afp4948.pdf pdf_icon

AFP4953WS

AFP4948 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4948, P-Channel enhancement mode -60V/-4.0A,RDS(ON)= 100m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.0A,RDS(ON)= 120m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly... See More ⇒

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Detailed specifications: AFP4637W, AFP4925, AFP4925S, AFP4925W, AFP4925WS, AFP4943WS, AFP4948, AFP4953S, IRFB3607, AFP6405S, AFP6405WS, AFP6459, AFP6801, AFP6993, AFP7617WS, AFP8206, AFP8451

Keywords - AFP4953WS MOSFET specs

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