AFP8995 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFP8995  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm

Encapsulados: SOT-89

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AFP8995 datasheet

 ..1. Size:689K  alfa-mos
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AFP8995

AFP8995 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 125m @VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 165m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.1. Size:915K  alfa-mos
 afp8943.pdf pdf_icon

AFP8995

AFP8943 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)= 43m @VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)= 58m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 9.2. Size:606K  alfa-mos
 afp8989.pdf pdf_icon

AFP8995

AFP8989 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)= 115m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)= 125m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.3. Size:595K  alfa-mos
 afp8931.pdf pdf_icon

AFP8995

AFP8931 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8931, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 36m @VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 46m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

MOSTRAR MÁS

Otros transistores... AFP8473, AFP8483, AFP8803, AFP8823, AFP8833, AFP8931, AFP8943, AFP8989, AO3407, AFP9407, AFP9434WS, AFP9435S, AFP9435WS, AFP9510S, AFP9565S, AFP9566W, AFP9575S