AFP8995 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AFP8995
   Código: 95*
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 1.45 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 4.6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 2.5 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 50 pF
   Resistencia entre drenaje y fuente RDS(on): 0.125 Ohm
   Paquete / Cubierta: SOT-89

Búsqueda de reemplazo de MOSFET AFP8995

AFP8995 Datasheet (PDF)

..1. Size:689K alfa-mos
afp8995.pdf

AFP8995 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 125m@VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 165m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

9.1. Size:915K alfa-mos
afp8943.pdf

AFP8943 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)= 43m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)= 58m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

9.2. Size:606K alfa-mos
afp8989.pdf

AFP8989 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)= 115m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)= 125m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

9.3. Size:595K alfa-mos
afp8931.pdf

AFP8931 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8931, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 36m@VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 46m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

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