ALD1103PBL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ALD1103PBL
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 10 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.04 A
   Tjⓘ - Temperatura máxima de unión: 70 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 75 Ohm
   Paquete / Cubierta: TO-116

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ALD1103PBL Datasheet (PDF)

7.1. Size:66K ald
ald1103.pdf

ADVANCEDLINEARDEVICES, INC.ALD1103DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1103 is a monolithic dual N-channel and dual P-channel matched Precision current mirrorstransistor pair intended for a broad range of analog applications. These Complementary push-pull linear drivesenhancement-mode transistors are manufactured wit

8.1. Size:75K ald
ald1101.pdf

ADVANCEDLINEAR ALD1101A/ALD1101BDEVICES, INC.ALD1101DUAL N-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1101 is a monolithic dual N-channel matched transistor pair Precision current mirrorsintended for a broad range of analog applications. These enhancement- Precision current sourcesmode transistors are manufactured with Advanced Linear Devices' en-

8.2. Size:103K ald
ald110808-series.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD110808/ALD110808A/ALD110908/ALD110908AQUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.80VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/ Precision current mirrorsdual enhancement mode N-Channel MOSFETs matched at the factory Precision current sour

8.3. Size:104K ald
ald110814 ald110914.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD110814/ALD110914QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +1.40VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110814/ALD110914 are monolithic quad/dual enhancement mode N- Precision current mirrorsChannel MOSFETs matched at the factory using ALDs proven EPAD Precision current sourcesCMOS technol

8.4. Size:76K ald
ald1102.pdf

ADVANCEDLINEAR ALD1102A/ALD1102BDEVICES, INC.ALD1102DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1102 is a monolithic dual P-channel matched transistor pair Precision current mirrorsintended for a broad range of analog applications. These enhancement- Precision current sourcesmode transistors are manufactured with Advanced Linear Devices' en-

8.5. Size:54K ald
ald1108e ald1110e.pdf

ADVANCEDLINEARALD1108E/ALD1110EDEVICES, INC.QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAYFEATURES BENEFITS Electrically Programmable Analog Device Precision matched electrically after packagingCMOS Technology Simple, elegant single-chip user option Operates from 2V, 3V, 5V to 10V to trim voltage/current values Flexible basic circuit building

8.6. Size:66K ald
ald1105.pdf

ADVANCEDLINEARDEVICES, INC.ALD1105DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1105 is a monolithic dual N-channel and dual P-channel Precision current mirrorscomplementary matched transistor pair intended for a broad range of Complementary push-pull linear drivesanalog applications. These enhancement-mode transistors are

8.7. Size:46K ald
ald1107 ald1117.pdf

ADVANCEDLINEARALD1107/ALD1117DEVICES, INC.QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSThe ALD1107/ALD1117 are monolithic quad/dual P-channel enhance- Precision current sourcesment mode matched MOSFET transistor arrays intended for a broad range Precision current mirrorsof precision analog applications. The ALD1107/ALD1117 offer high input

8.8. Size:106K ald
ald110800 ald110800a ald110900 ald110900a.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD110800/ALD110800A/ALD110900/ALD110900AQUAD/DUAL N-CHANNEL ZERO THRESHOLD EPADVGS(th)= +0.00VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONFEATURESALD110800A/ALD110800/ALD110900A/ALD110900 are monolithic quad/ Precision zero threshold voltage modedual N-Channel MOSFETs matched at the factory using ALDs proven Nominal RDS

8.9. Size:104K ald
ald110804 ald110904.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD110804/ALD110904QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.40VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110804/ALD110904 are monolithic quad/dual enhancement mode N- Ultra low power (nanowatt) analog and digitalChannel MOSFETS matched at the factory using ALDs proven EPAD circuitsCMOS technology

8.10. Size:104K ald
ald110802 ald110902.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD110802/ALD110902QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.20VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110802/ALD110902 are monolithic quad/dual enhancement mode N- Ultra low power (nanowatt) analog and digitalChannel MOSFETS matched at the factory using ALDs proven EPAD circuitsCMOS technology

8.11. Size:100K ald
ald1106 ald1116.pdf

ADVANCEDLINEARDEVICES, INC.ALD1106/ALD1116QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSThe ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- Precision current mirrorsment mode matched MOSFET transistor arrays intended for a broad range Precision current sourcesof precision analog applications. The ALD1106/ALD1116 offer high in

Otros transistores... ALD1102APAL , ALD1102ASAL , ALD1102BPAL , ALD1102BSAL , ALD1102DA , ALD1102PAL , ALD1102SAL , ALD1103DB , IRFP064N , ALD1103SBL , ALD1105DB , ALD1105PBL , ALD1105SBL , ALD1106DB , ALD1106PBL , ALD1106SBL , ALD1116DA .

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