ALD1103PBL
MOSFET. Datasheet pdf. Equivalent
Type Designator: ALD1103PBL
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 10
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 0.04
A
Tjⓘ - Maximum Junction Temperature: 70
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 75
Ohm
Package:
TO-116
ALD1103PBL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ALD1103PBL
Datasheet (PDF)
7.1. Size:66K ald
ald1103.pdf 
ADVANCEDLINEARDEVICES, INC.ALD1103DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1103 is a monolithic dual N-channel and dual P-channel matched Precision current mirrorstransistor pair intended for a broad range of analog applications. These Complementary push-pull linear drivesenhancement-mode transistors are manufactured wit
8.1. Size:75K ald
ald1101.pdf
ADVANCEDLINEAR ALD1101A/ALD1101BDEVICES, INC.ALD1101DUAL N-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1101 is a monolithic dual N-channel matched transistor pair Precision current mirrorsintended for a broad range of analog applications. These enhancement- Precision current sourcesmode transistors are manufactured with Advanced Linear Devices' en-
8.2. Size:103K ald
ald110808-series.pdf
TMADVANCEDEPADLINEARDEVICES, INC.ALD110808/ALD110808A/ALD110908/ALD110908AQUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.80VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/ Precision current mirrorsdual enhancement mode N-Channel MOSFETs matched at the factory Precision current sour
8.3. Size:104K ald
ald110814 ald110914.pdf
TMADVANCEDEPADLINEARDEVICES, INC.ALD110814/ALD110914QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +1.40VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110814/ALD110914 are monolithic quad/dual enhancement mode N- Precision current mirrorsChannel MOSFETs matched at the factory using ALDs proven EPAD Precision current sourcesCMOS technol
8.4. Size:76K ald
ald1102.pdf
ADVANCEDLINEAR ALD1102A/ALD1102BDEVICES, INC.ALD1102DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1102 is a monolithic dual P-channel matched transistor pair Precision current mirrorsintended for a broad range of analog applications. These enhancement- Precision current sourcesmode transistors are manufactured with Advanced Linear Devices' en-
8.5. Size:54K ald
ald1108e ald1110e.pdf
ADVANCEDLINEARALD1108E/ALD1110EDEVICES, INC.QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAYFEATURES BENEFITS Electrically Programmable Analog Device Precision matched electrically after packagingCMOS Technology Simple, elegant single-chip user option Operates from 2V, 3V, 5V to 10V to trim voltage/current values Flexible basic circuit building
8.6. Size:66K ald
ald1105.pdf
ADVANCEDLINEARDEVICES, INC.ALD1105DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1105 is a monolithic dual N-channel and dual P-channel Precision current mirrorscomplementary matched transistor pair intended for a broad range of Complementary push-pull linear drivesanalog applications. These enhancement-mode transistors are
8.7. Size:46K ald
ald1107 ald1117.pdf
ADVANCEDLINEARALD1107/ALD1117DEVICES, INC.QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSThe ALD1107/ALD1117 are monolithic quad/dual P-channel enhance- Precision current sourcesment mode matched MOSFET transistor arrays intended for a broad range Precision current mirrorsof precision analog applications. The ALD1107/ALD1117 offer high input
8.8. Size:106K ald
ald110800 ald110800a ald110900 ald110900a.pdf
TMADVANCEDEPADLINEARDEVICES, INC.ALD110800/ALD110800A/ALD110900/ALD110900AQUAD/DUAL N-CHANNEL ZERO THRESHOLD EPADVGS(th)= +0.00VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONFEATURESALD110800A/ALD110800/ALD110900A/ALD110900 are monolithic quad/ Precision zero threshold voltage modedual N-Channel MOSFETs matched at the factory using ALDs proven Nominal RDS
8.9. Size:104K ald
ald110804 ald110904.pdf
TMADVANCEDEPADLINEARDEVICES, INC.ALD110804/ALD110904QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.40VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110804/ALD110904 are monolithic quad/dual enhancement mode N- Ultra low power (nanowatt) analog and digitalChannel MOSFETS matched at the factory using ALDs proven EPAD circuitsCMOS technology
8.10. Size:104K ald
ald110802 ald110902.pdf
TMADVANCEDEPADLINEARDEVICES, INC.ALD110802/ALD110902QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.20VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110802/ALD110902 are monolithic quad/dual enhancement mode N- Ultra low power (nanowatt) analog and digitalChannel MOSFETS matched at the factory using ALDs proven EPAD circuitsCMOS technology
8.11. Size:100K ald
ald1106 ald1116.pdf
ADVANCEDLINEARDEVICES, INC.ALD1106/ALD1116QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSThe ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- Precision current mirrorsment mode matched MOSFET transistor arrays intended for a broad range Precision current sourcesof precision analog applications. The ALD1106/ALD1116 offer high in
Datasheet: ALD1102APAL
, ALD1102ASAL
, ALD1102BPAL
, ALD1102BSAL
, ALD1102DA
, ALD1102PAL
, ALD1102SAL
, ALD1103DB
, AO4468
, ALD1103SBL
, ALD1105DB
, ALD1105PBL
, ALD1105SBL
, ALD1106DB
, ALD1106PBL
, ALD1106SBL
, ALD1116DA
.
