IRFB13N50A Todos los transistores

 

IRFB13N50A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB13N50A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 81 nC
   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO-220AB

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IRFB13N50A Datasheet (PDF)

 ..1. Size:189K  international rectifier
irfb13n50apbf.pdf

IRFB13N50A
IRFB13N50A

PD - 95122SMPS MOSFETIRFB13N50APbFHEXFET Power MOSFETAppIicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 500V 0.450 14Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avalanch

 ..2. Size:97K  international rectifier
irfb13n50a.pdf

IRFB13N50A
IRFB13N50A

PD - 94339SMPS MOSFETIRFB13N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.450 14A High Speed Power SwitchingBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltageand Current

 ..3. Size:201K  vishay
irfb13n50a sihfb13n50a.pdf

IRFB13N50A
IRFB13N50A

IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500Reqirements AvailableRDS(on) ()VGS = 10 V 0.450RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81COMPLIANTRuggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio

 ..4. Size:201K  vishay
irfb13n50a irfb13n50apbf sihfb13n50a.pdf

IRFB13N50A
IRFB13N50A

IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500Reqirements AvailableRDS(on) ()VGS = 10 V 0.450RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81COMPLIANTRuggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio

 ..5. Size:156K  infineon
irfb13n50a sihfb13n50a.pdf

IRFB13N50A
IRFB13N50A

IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500AvailableReqirementsRDS(on) ()VGS = 10 V 0.450RoHS*Qg (Max.) (nC) 81 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANTQgs (nC) 20Ruggedness Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguration

 ..6. Size:284K  inchange semiconductor
irfb13n50a.pdf

IRFB13N50A
IRFB13N50A

iscN-Channel MOSFET Transistor IRFB13N50AFEATURESLow drain-source on-resistance:RDS(ON) =0.45 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 9.1. Size:189K  international rectifier
irfb17n50lpbf.pdf

IRFB13N50A
IRFB13N50A

PD - 95123IRFB17N50LPbFSMPS MOSFETHEXFET Power MOSFETAppIicationsl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) typ. IDl High Speed Power Switching500V 0.28 16Al ZVS and High Frequency Circuitl PWM Invertersl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamic dv/dt Rugged

 9.2. Size:551K  international rectifier
irfb16n60l.pdf

IRFB13N50A
IRFB13N50A

FOR REVIEW ONLYPD - TBDPD - 94631SMPS MOSFETIRFB16N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 16A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS appli

 9.3. Size:83K  international rectifier
irfb18n50k.pdf

IRFB13N50A
IRFB13N50A

PD - 93926BIRFB18N50KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply500V 0.26 17A High Speed Power Switching Hard Switched and High FrequencyCircuitsBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized

 9.4. Size:211K  international rectifier
irfb16n60lpbf.pdf

IRFB13N50A
IRFB13N50A

PD - 95471SMPS MOSFETIRFB16N60LPbFApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 16A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

 9.5. Size:278K  international rectifier
irfb17n20dpbf irfsl17n20dpbf.pdf

IRFB13N50A
IRFB13N50A

PD- 95325IRFB17N20DPbF IRFS17N20DPbFSMPS MOSFET IRFSL17N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.17 16Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanch

 9.6. Size:206K  international rectifier
irfb16n50kpbf.pdf

IRFB13N50A
IRFB13N50A

PD - 95619SMPS MOSFETIRFB16N50KPbFApplicationsl Switch Mode Power Supply (SMPS)HEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingVDSS RDS(on) typ. IDl Hard Switched and High FrequencyCircuits500V 285m 17Al Lead-FreeBenefitsl Low Gate Charge Qg results in Simple DriveRequirementl Improved Gate, Avalanche and Dynamicdv/dt SDRuggedne

 9.7. Size:140K  international rectifier
irfb17n20d irfs17n20d irfsl17n20d.pdf

IRFB13N50A
IRFB13N50A

PD- 93902AIRFB17N20D IRFS17N20DSMPS MOSFET IRFSL17N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.17 16ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT

 9.8. Size:82K  international rectifier
irfb17n50l.pdf

IRFB13N50A
IRFB13N50A

PD - 94084AIRFB17N50LSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on) typ. ID Uninterruptible Power Supply High Speed Power Switching500V 0.28 16A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Character

 9.9. Size:486K  international rectifier
irfb17n60k.pdf

IRFB13N50A
IRFB13N50A

PD - 95629IRFB17N60KPbF Lead-Free8/4/04Document Number: 91099 www.vishay.com1IRFB17N60KPbFDocument Number: 91099 www.vishay.com2IRFB17N60KPbFDocument Number: 91099 www.vishay.com3IRFB17N60KPbFDocument Number: 91099 www.vishay.com4IRFB17N60KPbFDocument Number: 91099 www.vishay.com5IRFB17N60KPbFDocument Number: 91099 www.vishay.com6IRFB17N60KPbF

 9.10. Size:202K  international rectifier
irfb11n50a.pdf

IRFB13N50A
IRFB13N50A

PD- 94832SMPS MOSFETIRFB11N50APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.52 11Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvala

 9.11. Size:177K  international rectifier
irfb18n50kpbf.pdf

IRFB13N50A
IRFB13N50A

SMPS MOSFETPD - 95472AIRFB18N50KPbFHEXFET Power MOSFETApplicationsl Switch Mode Power Supply (SMPS)VDSS RDS(on) typ. IDl Uninterruptible Power Supply500V 0.26 17Al High Speed Power Switchingl Hard Switched and High FrequencyCircuitsl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggedness

 9.12. Size:211K  vishay
irfb17n50l irfb17n50lpbf sihfb17n50l.pdf

IRFB13N50A
IRFB13N50A

IRFB17N50L, SiHFB17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 130COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 59and CurrentCo

 9.13. Size:1018K  vishay
irfb17n60k irfb17n60kpbf.pdf

IRFB13N50A
IRFB13N50A

IRFB17N60K, SiHFB17N60KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Smaller TO-220 PackageVDS (V) 600Available Low Gate Charge Qg Results in Simple DriveRDS(on) ()VGS = 10 V 0.35RoHS*RequirementQg (Max.) (nC) 99COMPLIANT Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 32RuggednessQgd (nC) 47 Fully Characterized Capacitance and Avalanc

 9.14. Size:168K  vishay
irfb18n50k.pdf

IRFB13N50A
IRFB13N50A

IRFB18N50K, SiHFB18N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 120COMPLIANTRuggednessQgs (nC) 34 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 54and CurrentCon

 9.15. Size:165K  vishay
irfb16n50k irfb16n50kpbf.pdf

IRFB13N50A
IRFB13N50A

IRFB16N50K, SiHFB16N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.285RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 89 COMPLIANTRuggednessQgs (nC) 27 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 43and CurrentCon

 9.16. Size:865K  vishay
irfb16n60lpbf.pdf

IRFB13N50A
IRFB13N50A

IRFB16N60L, SiHFB16N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.385RoHS*COMPLIANT Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 100RequirementsQgs (nC) 30 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 9.17. Size:137K  vishay
irfb11n50a sihfb11n50a.pdf

IRFB13N50A
IRFB13N50A

IRFB11N50A, SiHFB11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 52COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 18Avalanche Voltage and currentConfi

 9.18. Size:223K  vishay
irfb18n50k sihfb18n50k.pdf

IRFB13N50A
IRFB13N50A

IRFB18N50K, SiHFB18N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 120COMPLIANTRuggednessQgs (nC) 34 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 54and CurrentCon

 9.19. Size:163K  vishay
irfb11n50apbf.pdf

IRFB13N50A
IRFB13N50A

IRFB11N50A, SiHFB11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 52COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 18Avalanche Voltage and currentConfi

 9.20. Size:210K  vishay
irfb17n50l sihfb17n50l.pdf

IRFB13N50A
IRFB13N50A

IRFB17N50L, SiHFB17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 130COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 59and CurrentCo

 9.21. Size:184K  infineon
irfb11n50apbf.pdf

IRFB13N50A
IRFB13N50A

PD- 94832SMPS MOSFETIRFB11N50APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.52 11Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvala

 9.22. Size:284K  inchange semiconductor
irfb17n50l.pdf

IRFB13N50A
IRFB13N50A

iscN-Channel MOSFET Transistor IRFB17N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.32 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

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