IRFB13N50A Specs and Replacement
Type Designator: IRFB13N50A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ -
Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-220AB
- MOSFET ⓘ Cross-Reference Search
IRFB13N50A datasheet
..1. Size:189K international rectifier
irfb13n50apbf.pdf 
PD - 95122 SMPS MOSFET IRFB13N50APbF HEXFET Power MOSFET AppIications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.450 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characterized Capacitance and Avalanch... See More ⇒
..2. Size:97K international rectifier
irfb13n50a.pdf
PD - 94339 SMPS MOSFET IRFB13N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.450 14A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current... See More ⇒
..3. Size:201K vishay
irfb13n50a sihfb13n50a.pdf
IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ( )VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio... See More ⇒
..4. Size:201K vishay
irfb13n50a irfb13n50apbf sihfb13n50a.pdf
IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ( )VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio... See More ⇒
..5. Size:156K infineon
irfb13n50a sihfb13n50a.pdf
IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Available Reqirements RDS(on) ( )VGS = 10 V 0.450 RoHS* Qg (Max.) (nC) 81 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qgs (nC) 20 Ruggedness Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuration... See More ⇒
..6. Size:284K inchange semiconductor
irfb13n50a.pdf
iscN-Channel MOSFET Transistor IRFB13N50A FEATURES Low drain-source on-resistance RDS(ON) =0.45 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
9.1. Size:189K international rectifier
irfb17n50lpbf.pdf
PD - 95123 IRFB17N50LPbF SMPS MOSFET HEXFET Power MOSFET AppIications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.28 16A l ZVS and High Frequency Circuit l PWM Inverters l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Rugged... See More ⇒
9.2. Size:551K international rectifier
irfb16n60l.pdf
FOR REVIEW ONLY PD - TBD PD - 94631 SMPS MOSFET IRFB16N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 16A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS appli... See More ⇒
9.3. Size:83K international rectifier
irfb18n50k.pdf
PD - 93926B IRFB18N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.26 17A High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized ... See More ⇒
9.4. Size:211K international rectifier
irfb16n60lpbf.pdf
PD - 95471 SMPS MOSFET IRFB16N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 16A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. ... See More ⇒
9.5. Size:278K international rectifier
irfb17n20dpbf irfsl17n20dpbf.pdf
PD- 95325 IRFB17N20DPbF IRFS17N20DPbF SMPS MOSFET IRFSL17N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.17 16A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanch... See More ⇒
9.6. Size:206K international rectifier
irfb16n50kpbf.pdf
PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l Switch Mode Power Supply (SMPS) HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching VDSS RDS(on) typ. ID l Hard Switched and High Frequency Circuits 500V 285m 17A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt S D Ruggedne... See More ⇒
9.7. Size:140K international rectifier
irfb17n20d irfs17n20d irfsl17n20d.pdf
PD- 93902A IRFB17N20D IRFS17N20D SMPS MOSFET IRFSL17N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.17 16A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T... See More ⇒
9.8. Size:82K international rectifier
irfb17n50l.pdf
PD - 94084A IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.28 16A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Character... See More ⇒
9.9. Size:486K international rectifier
irfb17n60k.pdf
PD - 95629 IRFB17N60KPbF Lead-Free 8/4/04 Document Number 91099 www.vishay.com 1 IRFB17N60KPbF Document Number 91099 www.vishay.com 2 IRFB17N60KPbF Document Number 91099 www.vishay.com 3 IRFB17N60KPbF Document Number 91099 www.vishay.com 4 IRFB17N60KPbF Document Number 91099 www.vishay.com 5 IRFB17N60KPbF Document Number 91099 www.vishay.com 6 IRFB17N60KPbF ... See More ⇒
9.10. Size:202K international rectifier
irfb11n50a.pdf
PD- 94832 SMPS MOSFET IRFB11N50APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.52 11A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avala... See More ⇒
9.11. Size:184K international rectifier
irfb11n50apbf.pdf
PD- 94832 SMPS MOSFET IRFB11N50APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.52 11A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avala... See More ⇒
9.12. Size:177K international rectifier
irfb18n50kpbf.pdf
SMPS MOSFET PD - 95472A IRFB18N50KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID l Uninterruptible Power Supply 500V 0.26 17A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ... See More ⇒
9.13. Size:211K vishay
irfb17n50l irfb17n50lpbf sihfb17n50l.pdf
IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 130 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 59 and Current Co... See More ⇒
9.14. Size:1018K vishay
irfb17n60k irfb17n60kpbf.pdf
IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Smaller TO-220 Package VDS (V) 600 Available Low Gate Charge Qg Results in Simple Drive RDS(on) ( )VGS = 10 V 0.35 RoHS* Requirement Qg (Max.) (nC) 99 COMPLIANT Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 32 Ruggedness Qgd (nC) 47 Fully Characterized Capacitance and Avalanc... See More ⇒
9.15. Size:168K vishay
irfb18n50k.pdf
IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Con... See More ⇒
9.16. Size:165K vishay
irfb16n50k irfb16n50kpbf.pdf
IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.285 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 89 COMPLIANT Ruggedness Qgs (nC) 27 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 43 and Current Con... See More ⇒
9.17. Size:865K vishay
irfb16n60lpbf.pdf
IRFB16N60L, SiHFB16N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.385 RoHS* COMPLIANT Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 100 Requirements Qgs (nC) 30 Enhanced dV/dt Capabilities Offer Improved Ruggedness ... See More ⇒
9.18. Size:137K vishay
irfb11n50a sihfb11n50a.pdf
IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 52 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 18 Avalanche Voltage and current Confi... See More ⇒
9.19. Size:223K vishay
irfb18n50k sihfb18n50k.pdf
IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Con... See More ⇒
9.20. Size:163K vishay
irfb11n50apbf.pdf
IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 52 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 18 Avalanche Voltage and current Confi... See More ⇒
9.21. Size:210K vishay
irfb17n50l sihfb17n50l.pdf
IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 130 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 59 and Current Co... See More ⇒
9.22. Size:284K inchange semiconductor
irfb17n50l.pdf
iscN-Channel MOSFET Transistor IRFB17N50L FEATURES Low drain-source on-resistance RDS(ON) =0.32 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
Detailed specifications: ALD1105SBL, ALD1106DB, ALD1106PBL, ALD1106SBL, ALD1116DA, ALD1116PAL, ALD1116SAL, IRFB11N50APBF, 20N60, IRFB13N50APBF, IRFB16N50K, IRFB16N50KPBF, IRFB16N60LPBF, IRFB17N20D, IRFB17N20DPBF, IRFB17N50L, IRFB17N50LPBF
Keywords - IRFB13N50A MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
