IRFB16N50K Todos los transistores

 

IRFB16N50K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB16N50K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 280 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 77 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

IRFB16N50K Datasheet (PDF)

 ..1. Size:206K  international rectifier
irfb16n50kpbf.pdf pdf_icon

IRFB16N50K

PD - 95619SMPS MOSFETIRFB16N50KPbFApplicationsl Switch Mode Power Supply (SMPS)HEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingVDSS RDS(on) typ. IDl Hard Switched and High FrequencyCircuits500V 285m 17Al Lead-FreeBenefitsl Low Gate Charge Qg results in Simple DriveRequirementl Improved Gate, Avalanche and Dynamicdv/dt SDRuggedne

 ..2. Size:165K  vishay
irfb16n50k irfb16n50kpbf.pdf pdf_icon

IRFB16N50K

IRFB16N50K, SiHFB16N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.285RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 89 COMPLIANTRuggednessQgs (nC) 27 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 43and CurrentCon

 7.1. Size:551K  international rectifier
irfb16n60l.pdf pdf_icon

IRFB16N50K

FOR REVIEW ONLYPD - TBDPD - 94631SMPS MOSFETIRFB16N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 16A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS appli

 7.2. Size:211K  international rectifier
irfb16n60lpbf.pdf pdf_icon

IRFB16N50K

PD - 95471SMPS MOSFETIRFB16N60LPbFApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 16A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

Otros transistores... ALD1106PBL , ALD1106SBL , ALD1116DA , ALD1116PAL , ALD1116SAL , IRFB11N50APBF , IRFB13N50A , IRFB13N50APBF , IRF540N , IRFB16N50KPBF , IRFB16N60LPBF , IRFB17N20D , IRFB17N20DPBF , IRFB17N50L , IRFB17N50LPBF , IRFB17N60K , IRFB17N60KPBF .

History: IXTP50N28T | 3SK249

 

 
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