Справочник MOSFET. IRFB16N50K

 

IRFB16N50K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB16N50K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 280 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 60 nC
   trⓘ - Время нарастания: 77 ns
   Cossⓘ - Выходная емкость: 240 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для IRFB16N50K

 

 

IRFB16N50K Datasheet (PDF)

 ..1. Size:206K  international rectifier
 irfb16n50kpbf.pdf

IRFB16N50K IRFB16N50K

PD - 95619SMPS MOSFETIRFB16N50KPbFApplicationsl Switch Mode Power Supply (SMPS)HEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingVDSS RDS(on) typ. IDl Hard Switched and High FrequencyCircuits500V 285m 17Al Lead-FreeBenefitsl Low Gate Charge Qg results in Simple DriveRequirementl Improved Gate, Avalanche and Dynamicdv/dt SDRuggedne

 ..2. Size:165K  vishay
 irfb16n50k irfb16n50kpbf.pdf

IRFB16N50K IRFB16N50K

IRFB16N50K, SiHFB16N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.285RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 89 COMPLIANTRuggednessQgs (nC) 27 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 43and CurrentCon

 7.1. Size:551K  international rectifier
 irfb16n60l.pdf

IRFB16N50K IRFB16N50K

FOR REVIEW ONLYPD - TBDPD - 94631SMPS MOSFETIRFB16N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 16A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS appli

 7.2. Size:211K  international rectifier
 irfb16n60lpbf.pdf

IRFB16N50K IRFB16N50K

PD - 95471SMPS MOSFETIRFB16N60LPbFApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 16A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

 7.3. Size:865K  vishay
 irfb16n60lpbf.pdf

IRFB16N50K IRFB16N50K

IRFB16N60L, SiHFB16N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.385RoHS*COMPLIANT Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 100RequirementsQgs (nC) 30 Enhanced dV/dt Capabilities Offer Improved Ruggedness

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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