IRFB23N15DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB23N15DPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 260 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: TO-220AB
- Selección de transistores por parámetros
IRFB23N15DPBF Datasheet (PDF)
irfb23n15dpbf irfs23n15dpbf irfsl23n15dpbf.pdf

PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F
irfb23n15dpbf irfsl23n15dpbf.pdf

PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F
irfs23n15d irfb23n15d irfsl23n15d.pdf

PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan
irfb23n15d.pdf

IRFB23N15Dwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise no
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: CSFR7N60D | IRFR9220 | BFC23 | 2SJ652-1E | SIR496DP | SWF740D | AO4914
History: CSFR7N60D | IRFR9220 | BFC23 | 2SJ652-1E | SIR496DP | SWF740D | AO4914



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