Справочник MOSFET. IRFB23N15DPBF

 

IRFB23N15DPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB23N15DPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 136 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 260 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRFB23N15DPBF

 

 

IRFB23N15DPBF Datasheet (PDF)

 ..1. Size:278K  international rectifier
 irfb23n15dpbf irfsl23n15dpbf.pdf

IRFB23N15DPBF IRFB23N15DPBF

PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F

 ..2. Size:278K  infineon
 irfb23n15dpbf irfs23n15dpbf irfsl23n15dpbf.pdf

IRFB23N15DPBF IRFB23N15DPBF

PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F

 4.1. Size:142K  international rectifier
 irfs23n15d irfb23n15d irfsl23n15d.pdf

IRFB23N15DPBF IRFB23N15DPBF

PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan

 4.2. Size:844K  cn vbsemi
 irfb23n15d.pdf

IRFB23N15DPBF IRFB23N15DPBF

IRFB23N15Dwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise no

 4.3. Size:227K  inchange semiconductor
 irfb23n15d.pdf

IRFB23N15DPBF IRFB23N15DPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB23N15DIIRFB23N15DFEATURESStatic drain-source on-resistance:RDS(on) 90mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)a

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