IRFB3004PBF Todos los transistores

 ..1. Size:457K  international rectifier
 irfb3004pbf irfs3004pbf irfsl3004pbf.pdf

PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m G ID (Silicon Limited) 340A c Benefits ID (Package Limited) 195A S l Improved Gate,

 6.1. Size:289K  international rectifier
 irfb3004gpbf.pdf

PD - 96237 IRFB3004GPbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m G ID (Silicon Limited) 340A Benefits ID (Package Limited) 195A S l Improved Gate, Avalanche and Dynamic dV/dt Rugged

 6.2. Size:247K  inchange semiconductor
 irfb3004.pdf

isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004 FEATURES Static drain-source on-resistance RDS(on) 1.75m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply Hard Switched a

 7.1. Size:245K  international rectifier
 irfb3006pbf.pdf

IRFB3006PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification RDS(on) typ. 2.1m in SMPS l Uninterruptible Power Supply max. 2.5m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic D dV/dt Ruggedness l Full

 7.2. Size:288K  international rectifier
 irfb3006gpbf.pdf

PD - 96238 IRFB3006GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.1m l Uninterruptible Power Supply l High Speed Power Switching max. 2.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 270A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 7.3. Size:246K  inchange semiconductor
 irfb3006.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3006 IIRFB3006 FEATURES Static drain-source on-resistance RDS(on) 2.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU