Справочник MOSFET. IRFB3004PBF

 

IRFB3004PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB3004PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 380 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 195 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 220 ns
   Cossⓘ - Выходная емкость: 2020 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00175 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRFB3004PBF

 

 

IRFB3004PBF Datasheet (PDF)

 ..1. Size:457K  international rectifier
 irfb3004pbf irfs3004pbf irfsl3004pbf.pdf

IRFB3004PBF IRFB3004PBF

PD - 97377IRFB3004PbFIRFS3004PbFIRFSL3004PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited)340AcBenefitsID (Package Limited)195A Sl Improved Gate,

 ..2. Size:457K  infineon
 irfb3004pbf irfs3004pbf irfsl3004pbf.pdf

IRFB3004PBF IRFB3004PBF

PD - 97377IRFB3004PbFIRFS3004PbFIRFSL3004PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited)340AcBenefitsID (Package Limited)195A Sl Improved Gate,

 6.1. Size:289K  international rectifier
 irfb3004gpbf.pdf

IRFB3004PBF IRFB3004PBF

PD - 96237IRFB3004GPbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited) 340ABenefitsID (Package Limited) 195A Sl Improved Gate, Avalanche and Dynamic dV/dtRugged

 6.2. Size:247K  inchange semiconductor
 irfb3004.pdf

IRFB3004PBF IRFB3004PBF

isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004FEATURESStatic drain-source on-resistance:RDS(on) 1.75mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHard Switched a

 7.1. Size:296K  international rectifier
 irfb3006pbf.pdf

IRFB3004PBF IRFB3004PBF

PD -97143IRFB3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.1m:l Uninterruptible Power Supplyl High Speed Power Switching max. 2.5m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)270A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRug

 7.2. Size:288K  international rectifier
 irfb3006gpbf.pdf

IRFB3004PBF IRFB3004PBF

PD - 96238IRFB3006GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.1ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

 7.3. Size:245K  infineon
 irfb3006pbf.pdf

IRFB3004PBF IRFB3004PBF

IRFB3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous RectificationRDS(on) typ.2.1m in SMPSl Uninterruptible Power Supply max. 2.5ml High Speed Power SwitchingGID (Silicon Limited) 270A l Hard Switched and High Frequency CircuitsID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and DynamicDdV/dt Ruggednessl Full

 7.4. Size:288K  infineon
 irfb3006gpbf.pdf

IRFB3004PBF IRFB3004PBF

PD - 96238IRFB3006GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.1ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

 7.5. Size:246K  inchange semiconductor
 irfb3006.pdf

IRFB3004PBF IRFB3004PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3006 IIRFB3006FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

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