IRFB3077PBF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFB3077PBF datasheet

..1. Size:295K international rectifier
irfb3077pbf.pdf pdf_icon

PD - 97047B IRFB3077PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-220 ID (Silicon Limited) 210A c l Improved Gate, Avalanche and Dynamic dV/

6.1. Size:291K international rectifier
irfb3077gpbf.pdf pdf_icon

PD - 96200 IRFB3077GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-220 ID (Silicon Limited) 210A l Improved Gate, Avalanche and Dynamic dV/dt ID (P

6.2. Size:1055K cn minos
irfb3077.pdf pdf_icon

80V N-Channel Power MOSFET DESCRIPTION The IRFB3077 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 200A R

6.3. Size:246K inchange semiconductor
irfb3077.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3077 IIRFB3077 FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

Otros transistores... IRFB23N15DPBF , IRFB23N20DPBF , IRFB260NPBF , IRFB3004GPBF , IRFB3004PBF , IRFB3006GPBF , IRFB3006PBF , IRFB3077GPBF , IRF630 , IRFB31N20DPBF , IRFB3206GPBF , IRFB3206PBF , IRFB3207PBF , IRFB3207ZGPBF , IRFB3207ZPBF , IRFB3306GPBF , IRFB3306PBF .