Справочник MOSFET. IRFB3077PBF

 

IRFB3077PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB3077PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 370 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 87 ns
   Cossⓘ - Выходная емкость: 820 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRFB3077PBF

 

 

IRFB3077PBF Datasheet (PDF)

 ..1. Size:295K  international rectifier
irfb3077pbf.pdf

IRFB3077PBF
IRFB3077PBF

PD - 97047BIRFB3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited)210A cl Improved Gate, Avalanche and Dynamic dV/

 ..2. Size:295K  infineon
irfb3077pbf.pdf

IRFB3077PBF
IRFB3077PBF

PD - 97047BIRFB3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited)210A cl Improved Gate, Avalanche and Dynamic dV/

 6.1. Size:291K  international rectifier
irfb3077gpbf.pdf

IRFB3077PBF
IRFB3077PBF

PD - 96200IRFB3077GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8ml Hard Switched and High Frequency Circuits max. 3.3mBenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited) 210A l Improved Gate, Avalanche and Dynamic dV/dtID (P

 6.2. Size:246K  inchange semiconductor
irfb3077.pdf

IRFB3077PBF
IRFB3077PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3077IIRFB3077FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 8.1. Size:296K  international rectifier
irfb3006pbf.pdf

IRFB3077PBF
IRFB3077PBF

PD -97143IRFB3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.1m:l Uninterruptible Power Supplyl High Speed Power Switching max. 2.5m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)270A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRug

 8.2. Size:457K  international rectifier
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf

IRFB3077PBF
IRFB3077PBF

PD - 97377IRFB3004PbFIRFS3004PbFIRFSL3004PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited)340AcBenefitsID (Package Limited)195A Sl Improved Gate,

 8.3. Size:289K  international rectifier
irfb3004gpbf.pdf

IRFB3077PBF
IRFB3077PBF

PD - 96237IRFB3004GPbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited) 340ABenefitsID (Package Limited) 195A Sl Improved Gate, Avalanche and Dynamic dV/dtRugged

 8.4. Size:288K  international rectifier
irfb3006gpbf.pdf

IRFB3077PBF
IRFB3077PBF

PD - 96238IRFB3006GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.1ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

 8.5. Size:245K  infineon
irfb3006pbf.pdf

IRFB3077PBF
IRFB3077PBF

IRFB3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous RectificationRDS(on) typ.2.1m in SMPSl Uninterruptible Power Supply max. 2.5ml High Speed Power SwitchingGID (Silicon Limited) 270A l Hard Switched and High Frequency CircuitsID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and DynamicDdV/dt Ruggednessl Full

 8.6. Size:457K  infineon
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf

IRFB3077PBF
IRFB3077PBF

PD - 97377IRFB3004PbFIRFS3004PbFIRFSL3004PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited)340AcBenefitsID (Package Limited)195A Sl Improved Gate,

 8.7. Size:288K  infineon
irfb3006gpbf.pdf

IRFB3077PBF
IRFB3077PBF

PD - 96238IRFB3006GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.1ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

 8.8. Size:247K  inchange semiconductor
irfb3004.pdf

IRFB3077PBF
IRFB3077PBF

isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004FEATURESStatic drain-source on-resistance:RDS(on) 1.75mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHard Switched a

 8.9. Size:246K  inchange semiconductor
irfb3006.pdf

IRFB3077PBF
IRFB3077PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3006 IIRFB3006FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

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