IRFB3307ZPBF Todos los transistores

 

IRFB3307ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB3307ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 79 nC
   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
   Paquete / Cubierta: TO-220AB
 

 Búsqueda de reemplazo de IRFB3307ZPBF MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRFB3307ZPBF Datasheet (PDF)

 ..1. Size:316K  international rectifier
 irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf pdf_icon

IRFB3307ZPBF

PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av

 ..2. Size:316K  international rectifier
 irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf pdf_icon

IRFB3307ZPBF

PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av

 5.1. Size:243K  international rectifier
 irfb3307zgpbf.pdf pdf_icon

IRFB3307ZPBF

PD - 96212AIRFB3307ZGPbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.l Hard Switched and High Frequency Circuits 4.6m max. 5.8mGID (Silicon Limited)128ABenefitsSID (Package Limited)120Al Improved Gate, Avalanche and Dynamicdv/dt Rugg

 5.2. Size:246K  inchange semiconductor
 irfb3307z.pdf pdf_icon

IRFB3307ZPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3307Z IIRFB3307ZFEATURESStatic drain-source on-resistance:RDS(on) 5.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

MOSTRAR MÁS

Otros transistores... IRFB3206GPBF , IRFB3206PBF , IRFB3207PBF , IRFB3207ZGPBF , IRFB3207ZPBF , IRFB3306GPBF , IRFB3306PBF , IRFB3307PBF , SPP20N60C3 , IRFB33N15DPBF , IRFB3407ZPBF , IRFB3507PBF , IRFB3607GPBF , IRFB3607PBF , IRFB3806PBF , IRFB38N20DPBF , IRFB4019PBF .

 

 
Back to Top

 


 
.