IRFB3307ZPBF PDF and Equivalents Search

 

IRFB3307ZPBF Specs and Replacement

Type Designator: IRFB3307ZPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: TO-220AB

IRFB3307ZPBF substitution

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IRFB3307ZPBF datasheet

 ..1. Size:316K  international rectifier
irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf pdf_icon

IRFB3307ZPBF

PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av... See More ⇒

 ..2. Size:316K  international rectifier
irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf pdf_icon

IRFB3307ZPBF

PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av... See More ⇒

 5.1. Size:243K  international rectifier
irfb3307zgpbf.pdf pdf_icon

IRFB3307ZPBF

PD - 96212A IRFB3307ZGPbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. l Hard Switched and High Frequency Circuits 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits S ID (Package Limited) 120A l Improved Gate, Avalanche and Dynamic dv/dt Rugg... See More ⇒

 5.2. Size:246K  inchange semiconductor
irfb3307z.pdf pdf_icon

IRFB3307ZPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3307Z IIRFB3307Z FEATURES Static drain-source on-resistance RDS(on) 5.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXI... See More ⇒

Detailed specifications: IRFB3206GPBF, IRFB3206PBF, IRFB3207PBF, IRFB3207ZGPBF, IRFB3207ZPBF, IRFB3306GPBF, IRFB3306PBF, IRFB3307PBF, K3569, IRFB33N15DPBF, IRFB3407ZPBF, IRFB3507PBF, IRFB3607GPBF, IRFB3607PBF, IRFB3806PBF, IRFB38N20DPBF, IRFB4019PBF

Keywords - IRFB3307ZPBF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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