IRFB3607GPBF Todos los transistores

 

IRFB3607GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB3607GPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 56 nC
   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO-220AB

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IRFB3607GPBF Datasheet (PDF)

 ..1. Size:288K  international rectifier
irfb3607gpbf.pdf

IRFB3607GPBF
IRFB3607GPBF

PD - 96329IRFB3607GPbFApplicationsl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt RuggednessDl Fully Characterized Capacitance andAval

 6.1. Size:321K  international rectifier
irfb3607pbf irfs3607pbf irfsl3607pbf.pdf

IRFB3607GPBF
IRFB3607GPBF

PD - 97308CIRFB3607PbFIRFS3607PbFApplicationsIRFSL3607PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characteriz

 6.2. Size:321K  infineon
irfb3607pbf irfs3607pbf irfsl3607pbf.pdf

IRFB3607GPBF
IRFB3607GPBF

PD - 97308CIRFB3607PbFIRFS3607PbFApplicationsIRFSL3607PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characteriz

 6.3. Size:261K  inchange semiconductor
irfb3607.pdf

IRFB3607GPBF
IRFB3607GPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3607FEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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