IRFB3607GPBF Todos los transistores

 

IRFB3607GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB3607GPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO-220AB
 

 Búsqueda de reemplazo de IRFB3607GPBF MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRFB3607GPBF Datasheet (PDF)

 ..1. Size:288K  international rectifier
irfb3607gpbf.pdf pdf_icon

IRFB3607GPBF

PD - 96329IRFB3607GPbFApplicationsl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt RuggednessDl Fully Characterized Capacitance andAval

 6.1. Size:321K  international rectifier
irfb3607pbf irfs3607pbf irfsl3607pbf.pdf pdf_icon

IRFB3607GPBF

PD - 97308CIRFB3607PbFIRFS3607PbFApplicationsIRFSL3607PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characteriz

 6.2. Size:880K  cn minos
irfb3607.pdf pdf_icon

IRFB3607GPBF

80V N-Channel Power MOSFETDESCRIPTIONThe IRFB3607 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)ina wide variety of applications.KEY CHARACTERISTICS V = 80V,I = 90ADS DR

 6.3. Size:261K  inchange semiconductor
irfb3607.pdf pdf_icon

IRFB3607GPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3607FEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =

Otros transistores... IRFB3207ZPBF , IRFB3306GPBF , IRFB3306PBF , IRFB3307PBF , IRFB3307ZPBF , IRFB33N15DPBF , IRFB3407ZPBF , IRFB3507PBF , SPP20N60C3 , IRFB3607PBF , IRFB3806PBF , IRFB38N20DPBF , IRFB4019PBF , IRFB4020PBF , IRFB4110GPBF , IRFB4110PBF , IRFB4115GPBF .

History: 2SK2791 | RU6055R | IRFB16N50KPBF | RU6H2L

 

 
Back to Top

 


 
.