IRFB3607GPBF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFB3607GPBF datasheet

..1. Size:288K international rectifier
irfb3607gpbf.pdf pdf_icon

PD - 96329 IRFB3607GPbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l Fully Characterized Capacitance and Aval

6.1. Size:321K international rectifier
irfb3607pbf irfs3607pbf irfsl3607pbf.pdf pdf_icon

PD - 97308C IRFB3607PbF IRFS3607PbF Applications IRFSL3607PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characteriz

6.2. Size:880K cn minos
irfb3607.pdf pdf_icon

80V N-Channel Power MOSFET DESCRIPTION The IRFB3607 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) ina wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 90A DS D R

6.3. Size:261K inchange semiconductor
irfb3607.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3607 FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =

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