IRFB4019PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB4019PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 74 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de IRFB4019PBF MOSFET
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IRFB4019PBF datasheet
irfb4019.pdf
isc N-Channel MOSFET Transistor IRFB4019 IIRFB4019 FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATINGS
irfb4020pbf.pdf
PD - 97195 DIGITAL AUDIO MOSFET IRFB4020PbF Features Key Parameters Key parameters optimized for Class-D audio VDS 200 V amplifier applications RDS(ON) typ. @ 10V m 80 Low RDSON for improved efficiency Qg typ. 18 nC Qsw typ. 6.7 nC Low QG and QSW for better THD and improved RG(int) typ. 3.2 efficiency TJ max 175 C Low QRR for better THD and lower EM
irfb4020.pdf
isc N-Channel MOSFET Transistor IRFB4020 IIRFB4020 FEATURES Static drain-source on-resistance RDS(on) 100m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATING
Otros transistores... IRFB3307ZPBF , IRFB33N15DPBF , IRFB3407ZPBF , IRFB3507PBF , IRFB3607GPBF , IRFB3607PBF , IRFB3806PBF , IRFB38N20DPBF , 12N60 , IRFB4020PBF , IRFB4110GPBF , IRFB4110PBF , IRFB4115GPBF , IRFB4115PBF , IRFB4127PBF , IRFB4137PBF , IRFB41N15DPBF .
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