IRFB4019PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB4019PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 74 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET IRFB4019PBF
IRFB4019PBF Datasheet (PDF)
irfb4019pbf.pdf
PD - 97075DIGITAL AUDIO MOSFETIRFB4019PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS 150 V Amplifier Applicationsm:RDS(ON) typ. @ 10V 80 Low RDSON for Improved EfficiencyQg typ. 13 nC Low QG and QSW for Better THD and ImprovedQsw typ. 5.1 nC EfficiencyRG(int) typ. 2.4 Low QRR for Better THD and Lower EMITJ max 175 C
irfb4019pbf.pdf
PD - 97075DIGITAL AUDIO MOSFETIRFB4019PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS 150 V Amplifier Applicationsm:RDS(ON) typ. @ 10V 80 Low RDSON for Improved EfficiencyQg typ. 13 nC Low QG and QSW for Better THD and ImprovedQsw typ. 5.1 nC EfficiencyRG(int) typ. 2.4 Low QRR for Better THD and Lower EMITJ max 175 C
irfb4019.pdf
isc N-Channel MOSFET Transistor IRFB4019IIRFB4019FEATURESStatic drain-source on-resistance:RDS(on) 95mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATINGS
irfb4020pbf.pdf
PD - 97195DIGITAL AUDIO MOSFETIRFB4020PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS200 V amplifier applicationsRDS(ON) typ. @ 10V m80 Low RDSON for improved efficiency Qg typ.18 nCQsw typ.6.7 nC Low QG and QSW for better THD and improvedRG(int) typ. 3.2 efficiencyTJ max175 C Low QRR for better THD and lower EM
irfb4020pbf.pdf
PD - 97195DIGITAL AUDIO MOSFETIRFB4020PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS200 V amplifier applicationsRDS(ON) typ. @ 10V m80 Low RDSON for improved efficiency Qg typ.18 nCQsw typ.6.7 nC Low QG and QSW for better THD and improvedRG(int) typ. 3.2 efficiencyTJ max175 C Low QRR for better THD and lower EM
irfb4020.pdf
isc N-Channel MOSFET Transistor IRFB4020IIRFB4020FEATURESStatic drain-source on-resistance:RDS(on) 100mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATING
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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