IRFB4019PBF - аналоги, параметры транзистора - Справочник транзисторов

IRFB4019PBF даташит

..1. Size:281K international rectifier
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6.1. Size:245K inchange semiconductor
irfb4019.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFB4019 IIRFB4019 FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATINGS

8.1. Size:641K international rectifier
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PD - 97195 DIGITAL AUDIO MOSFET IRFB4020PbF Features Key Parameters Key parameters optimized for Class-D audio VDS 200 V amplifier applications RDS(ON) typ. @ 10V m 80 Low RDSON for improved efficiency Qg typ. 18 nC Qsw typ. 6.7 nC Low QG and QSW for better THD and improved RG(int) typ. 3.2 efficiency TJ max 175 C Low QRR for better THD and lower EM

8.2. Size:245K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFB4020 IIRFB4020 FEATURES Static drain-source on-resistance RDS(on) 100m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATING

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