IRFB4212PBF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFB4212PBF datasheet

..1. Size:293K international rectifier
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PD - 96918A DIGITAL AUDIO MOSFET IRFB4212PbF Features Key Parameters Key parameters optimized for Class-D audio VDS 100 V amplifier applications m RDS(ON) typ. @ 10V 72.5 Low RDSON for improved efficiency Qg typ. 15 nC Low QG and QSW for better THD and improved Qsw typ. 8.3 nC efficiency RG(int) typ. 2.2 Low QRR for better THD and lower EMI TJ max 175 C

6.1. Size:244K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFB4212 IIRFB4212 FEATURES Static drain-source on-resistance RDS(on) 72.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

7.1. Size:231K international rectifier
irfb4215pbf.pdf pdf_icon

PD - 95757A IRFB4215PbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 9.0m G l Fast Switching l Fully Avalanche Rated ID = 115A l Optimized for SMPS Applications S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

7.2. Size:201K international rectifier
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PD - 95884 IRFB4215 HEXFET Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 9.0m G l Fast Switching l Fully Avalanche Rated ID = 115A l Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techn

Otros transistores... IRFB4020PBF , IRFB4110GPBF , IRFB4110PBF , IRFB4115GPBF , IRFB4115PBF , IRFB4127PBF , IRFB4137PBF , IRFB41N15DPBF , STP80NF70 , IRFB4215 , IRFB4215PBF , IRFB4227PBF , IRFB4228PBF , IRFB4229PBF , IRFB4233PBF , IRFB42N20DPBF , IRFB4310GPBF .