IRFB4212PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFB4212PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 66 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0725 Ohm
   Paquete / Cubierta: TO-220AB

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IRFB4212PBF Datasheet (PDF)

..1. Size:293K international rectifier
irfb4212pbf.pdf

PD - 96918ADIGITAL AUDIO MOSFETIRFB4212PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS 100 V amplifier applicationsm:RDS(ON) typ. @ 10V 72.5 Low RDSON for improved efficiencyQg typ. 15 nC Low QG and QSW for better THD and improvedQsw typ. 8.3 nC efficiencyRG(int) typ. 2.2 Low QRR for better THD and lower EMITJ max 175 C

6.1. Size:244K inchange semiconductor
irfb4212.pdf

isc N-Channel MOSFET Transistor IRFB4212IIRFB4212FEATURESStatic drain-source on-resistance:RDS(on) 72.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

7.1. Size:231K international rectifier
irfb4215pbf.pdf

PD - 95757AIRFB4215PbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 60Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 9.0mGl Fast Switchingl Fully Avalanche RatedID = 115Al Optimized for SMPS Applications Sl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced

7.2. Size:201K international rectifier
irfb4215.pdf

PD - 95884IRFB4215HEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 60Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 9.0mGl Fast Switchingl Fully Avalanche RatedID = 115Al Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techn

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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