IRFB4212PBF MOSFET Datasheet: N-Ch, 100V, 18A. Full specification with pinout and replacement list

IRFB4212PBF Specs and Replacement

Type Designator: IRFB4212PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0725 Ohm

Package: TO-220AB

IRFB4212PBF substitution

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IRFB4212PBF datasheet

..1. Size:293K international rectifier
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PD - 96918A DIGITAL AUDIO MOSFET IRFB4212PbF Features Key Parameters Key parameters optimized for Class-D audio VDS 100 V amplifier applications m RDS(ON) typ. @ 10V 72.5 Low RDSON for improved efficiency Qg typ. 15 nC Low QG and QSW for better THD and improved Qsw typ. 8.3 nC efficiency RG(int) typ. 2.2 Low QRR for better THD and lower EMI TJ max 175 C... See More ⇒

6.1. Size:244K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFB4212 IIRFB4212 FEATURES Static drain-source on-resistance RDS(on) 72.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

7.1. Size:231K international rectifier
irfb4215pbf.pdf pdf_icon

PD - 95757A IRFB4215PbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 9.0m G l Fast Switching l Fully Avalanche Rated ID = 115A l Optimized for SMPS Applications S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced... See More ⇒

7.2. Size:201K international rectifier
irfb4215.pdf pdf_icon

PD - 95884 IRFB4215 HEXFET Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 9.0m G l Fast Switching l Fully Avalanche Rated ID = 115A l Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techn... See More ⇒

Detailed specifications: IRFB4020PBF, IRFB4110GPBF, IRFB4110PBF, IRFB4115GPBF, IRFB4115PBF, IRFB4127PBF, IRFB4137PBF, IRFB41N15DPBF, STP80NF70, IRFB4215, IRFB4215PBF, IRFB4227PBF, IRFB4228PBF, IRFB4229PBF, IRFB4233PBF, IRFB42N20DPBF, IRFB4310GPBF