All MOSFET. IRFB4212PBF Datasheet

 

IRFB4212PBF Datasheet and Replacement


   Type Designator: IRFB4212PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0725 Ohm
   Package: TO-220AB
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IRFB4212PBF Datasheet (PDF)

 ..1. Size:293K  international rectifier
irfb4212pbf.pdf pdf_icon

IRFB4212PBF

PD - 96918ADIGITAL AUDIO MOSFETIRFB4212PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS 100 V amplifier applicationsm:RDS(ON) typ. @ 10V 72.5 Low RDSON for improved efficiencyQg typ. 15 nC Low QG and QSW for better THD and improvedQsw typ. 8.3 nC efficiencyRG(int) typ. 2.2 Low QRR for better THD and lower EMITJ max 175 C

 6.1. Size:244K  inchange semiconductor
irfb4212.pdf pdf_icon

IRFB4212PBF

isc N-Channel MOSFET Transistor IRFB4212IIRFB4212FEATURESStatic drain-source on-resistance:RDS(on) 72.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 7.1. Size:231K  international rectifier
irfb4215pbf.pdf pdf_icon

IRFB4212PBF

PD - 95757AIRFB4215PbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 60Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 9.0mGl Fast Switchingl Fully Avalanche RatedID = 115Al Optimized for SMPS Applications Sl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced

 7.2. Size:201K  international rectifier
irfb4215.pdf pdf_icon

IRFB4212PBF

PD - 95884IRFB4215HEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 60Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 9.0mGl Fast Switchingl Fully Avalanche RatedID = 115Al Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techn

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

Keywords - IRFB4212PBF MOSFET datasheet

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