IRFB4310ZGPBF Todos los transistores

 

IRFB4310ZGPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFB4310ZGPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 490 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO-220AB

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IRFB4310ZGPBF datasheet

 ..1. Size:291K  international rectifier
 irfb4310zgpbf.pdf pdf_icon

IRFB4310ZGPBF

PD - 96189 IRFB4310ZGPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedn

 5.1. Size:324K  international rectifier
 irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf pdf_icon

IRFB4310ZGPBF

PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

 5.2. Size:251K  inchange semiconductor
 irfb4310z.pdf pdf_icon

IRFB4310ZGPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310Z IIRFB4310Z FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXI

 5.3. Size:206K  inchange semiconductor
 irfb4310zpbf.pdf pdf_icon

IRFB4310ZGPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310ZPBF FEATURES With TO-220 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

MOSTRAR MÁS

Otros transistores... IRFB4215PBF , IRFB4227PBF , IRFB4228PBF , IRFB4229PBF , IRFB4233PBF , IRFB42N20DPBF , IRFB4310GPBF , IRFB4310PBF , 5N60 , IRFB4310ZPBF , IRFB4321GPBF , IRFB4321PBF , IRFB4332PBF , IRFB4410ZGPBF , IRFB4410ZPBF , IRFB4510PBF , IRFB4610PBF .

History: SML100J19 | SML1004RBN | STV7NA40 | NTB6412AN

 

 

 

 

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