Справочник MOSFET. IRFB4310ZGPBF

 

IRFB4310ZGPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB4310ZGPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 120 nC
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 490 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRFB4310ZGPBF

 

 

IRFB4310ZGPBF Datasheet (PDF)

 ..1. Size:291K  international rectifier
 irfb4310zgpbf.pdf

IRFB4310ZGPBF IRFB4310ZGPBF

PD - 96189IRFB4310ZGPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8ml Uninterruptible Power Supplyl High Speed Power Switching max. 6.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 127A ID (Package Limited) 120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggedn

 ..2. Size:291K  infineon
 irfb4310zgpbf.pdf

IRFB4310ZGPBF IRFB4310ZGPBF

PD - 96189IRFB4310ZGPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8ml Uninterruptible Power Supplyl High Speed Power Switching max. 6.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 127A ID (Package Limited) 120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggedn

 5.1. Size:324K  international rectifier
 irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf

IRFB4310ZGPBF IRFB4310ZGPBF

PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,

 5.2. Size:324K  infineon
 irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf

IRFB4310ZGPBF IRFB4310ZGPBF

PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,

 5.3. Size:251K  inchange semiconductor
 irfb4310z.pdf

IRFB4310ZGPBF IRFB4310ZGPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310Z IIRFB4310ZFEATURESStatic drain-source on-resistance:RDS(on) 6.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

 5.4. Size:206K  inchange semiconductor
 irfb4310zpbf.pdf

IRFB4310ZGPBF IRFB4310ZGPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310ZPBFFEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

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