IRFB4321GPBF Todos los transistores

 

IRFB4321GPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFB4321GPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 330 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 83 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 390 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: TO-220AB

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IRFB4321GPBF datasheet

 ..1. Size:283K  international rectifier
 irfb4321gpbf.pdf pdf_icon

IRFB4321GPBF

PD - 96215 IRFB4321GPbF Applications HEXFET Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m ID 83A Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D D Performance l Improved Diode Recovery

 6.1. Size:277K  international rectifier
 irfb4321pbf.pdf pdf_icon

IRFB4321GPBF

PD - 97103B IRFB4321PbF HEXFET Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m Benefits ID 85A l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance D D l Improved Diode Re

 6.2. Size:206K  inchange semiconductor
 irfb4321pbf.pdf pdf_icon

IRFB4321GPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4321PBF FEATURES With low gate drive requirements Improved diode recovery improves switching Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 6.3. Size:245K  inchange semiconductor
 irfb4321.pdf pdf_icon

IRFB4321GPBF

isc N-Channel MOSFET Transistor IRFB4321 IIRFB4321 FEATURES Static drain-source on-resistance RDS(on) 15m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM

MOSTRAR MÁS

Otros transistores... IRFB4228PBF , IRFB4229PBF , IRFB4233PBF , IRFB42N20DPBF , IRFB4310GPBF , IRFB4310PBF , IRFB4310ZGPBF , IRFB4310ZPBF , SI2302 , IRFB4321PBF , IRFB4332PBF , IRFB4410ZGPBF , IRFB4410ZPBF , IRFB4510PBF , IRFB4610PBF , IRFB4615PBF , IRFB4620PBF .

History: IRLZ24 | STW9NK90Z | STY140NS10

 

 

 

 

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