IRFB4321GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFB4321GPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 330 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 83 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 390 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO-220AB

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IRFB4321GPBF Datasheet (PDF)

..1. Size:283K international rectifier
irfb4321gpbf.pdf

PD - 96215IRFB4321GPbFApplicationsHEXFET Power MOSFETl Motion Control ApplicationsVDSS 150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.12ml Hard Switched and High Frequency Circuits max. 15mID 83ABenefitsl Low RDSON Reduces Lossesl Low Gate Charge Improves the Switching DD Performancel Improved Diode Recovery

6.1. Size:277K international rectifier
irfb4321pbf.pdf

PD - 97103BIRFB4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power SupplyRDS(on) typ.12m:l Hard Switched and High Frequency Circuitsmax. 15m:BenefitsID 85Al Low RDSON Reduces Lossesl Low Gate Charge Improves the Switching PerformanceDDl Improved Diode Re

6.2. Size:277K infineon
irfb4321pbf.pdf

6.3. Size:206K inchange semiconductor
irfb4321pbf.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4321PBFFEATURESWith low gate drive requirementsImproved diode recovery improves switchingEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

6.4. Size:245K inchange semiconductor
irfb4321.pdf

isc N-Channel MOSFET Transistor IRFB4321IIRFB4321FEATURESStatic drain-source on-resistance:RDS(on) 15mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

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