IRFB4321GPBF datasheet, аналоги, основные параметры

Наименование производителя: IRFB4321GPBF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 330 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 83 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 60 ns

Cossⓘ - Выходная емкость: 390 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm

Тип корпуса: TO-220AB

Аналог (замена) для IRFB4321GPBF

- подборⓘ MOSFET транзистора по параметрам

 

IRFB4321GPBF даташит

 ..1. Size:283K  international rectifier
 irfb4321gpbf.pdf pdf_icon

IRFB4321GPBF

PD - 96215 IRFB4321GPbF Applications HEXFET Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m ID 83A Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D D Performance l Improved Diode Recovery

 6.1. Size:277K  international rectifier
 irfb4321pbf.pdf pdf_icon

IRFB4321GPBF

PD - 97103B IRFB4321PbF HEXFET Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m Benefits ID 85A l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance D D l Improved Diode Re

 6.2. Size:206K  inchange semiconductor
 irfb4321pbf.pdf pdf_icon

IRFB4321GPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4321PBF FEATURES With low gate drive requirements Improved diode recovery improves switching Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 6.3. Size:245K  inchange semiconductor
 irfb4321.pdf pdf_icon

IRFB4321GPBF

isc N-Channel MOSFET Transistor IRFB4321 IIRFB4321 FEATURES Static drain-source on-resistance RDS(on) 15m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM

ПОКАЗАТЬ ЕЩЁ

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