IRFB5620PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFB5620PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 144 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 14.6 nS
   Cossⓘ - Capacitancia de salida: 125 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0725 Ohm
   Paquete / Cubierta: TO-220AB

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IRFB5620PBF Datasheet (PDF)

..1. Size:268K international rectifier
irfb5620pbf.pdf

PD - 96174DIGITAL AUDIO MOSFETIRFB5620PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS200 V Amplifier ApplicationsRDS(ON) typ. @ 10V m60 Low RDSON for Improved EfficiencyQg typ.25 nC Low QG and QSW for Better THD and Improved Qsw typ.9.8 nCRG(int) typ. 2.6 EfficiencyTJ max175 C Low QRR for Better THD and Lower EM

..2. Size:268K infineon
irfb5620pbf.pdf

6.1. Size:244K inchange semiconductor
irfb5620.pdf

isc N-Channel MOSFET Transistor IRFB5620IIRFB5620FEATURESStatic drain-source on-resistance:RDS(on) 72.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATIN

8.1. Size:272K international rectifier
irfb5615pbf.pdf

PD - 96173DIGITAL AUDIO MOSFETIRFB5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m32 Low RDSON for Improved Efficiency Qg typ.26 nCQsw typ. Low QG and QSW for Better THD and Improved 11 nCRG(int) typ. 2.7 EfficiencyTJ max175 C Low QRR for Better THD and Lower EMI

8.2. Size:272K infineon
irfb5615pbf.pdf

8.3. Size:618K cn evvo
irfb5615.pdf

IRFB5615N-Ch 150V Fast Switching MOSFETs General Description Product Summary Advanced Trench MOS Technology BVDSS RDSON ID Low Gate Charge 150V 13m 85A Low R DS(ON) 100% EAS Guaranteed Green Device Available TO220 Pin Configuration Applications Load Switch LED Applications Networking Applications Quick Charger Absolute Max

8.4. Size:245K inchange semiconductor
irfb5615.pdf

isc N-Channel MOSFET Transistor IRFB5615IIRFB5615FEATURESStatic drain-source on-resistance:RDS(on) 39mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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