All MOSFET. IRFB5620PBF Datasheet

 

IRFB5620PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB5620PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 144 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 14.6 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0725 Ohm
   Package: TO-220AB

 IRFB5620PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB5620PBF Datasheet (PDF)

 ..1. Size:268K  international rectifier
 irfb5620pbf.pdf

IRFB5620PBF IRFB5620PBF

PD - 96174DIGITAL AUDIO MOSFETIRFB5620PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS200 V Amplifier ApplicationsRDS(ON) typ. @ 10V m60 Low RDSON for Improved EfficiencyQg typ.25 nC Low QG and QSW for Better THD and Improved Qsw typ.9.8 nCRG(int) typ. 2.6 EfficiencyTJ max175 C Low QRR for Better THD and Lower EM

 ..2. Size:268K  infineon
 irfb5620pbf.pdf

IRFB5620PBF IRFB5620PBF

PD - 96174DIGITAL AUDIO MOSFETIRFB5620PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS200 V Amplifier ApplicationsRDS(ON) typ. @ 10V m60 Low RDSON for Improved EfficiencyQg typ.25 nC Low QG and QSW for Better THD and Improved Qsw typ.9.8 nCRG(int) typ. 2.6 EfficiencyTJ max175 C Low QRR for Better THD and Lower EM

 6.1. Size:244K  inchange semiconductor
 irfb5620.pdf

IRFB5620PBF IRFB5620PBF

isc N-Channel MOSFET Transistor IRFB5620IIRFB5620FEATURESStatic drain-source on-resistance:RDS(on) 72.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATIN

 8.1. Size:272K  international rectifier
 irfb5615pbf.pdf

IRFB5620PBF IRFB5620PBF

PD - 96173DIGITAL AUDIO MOSFETIRFB5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m32 Low RDSON for Improved Efficiency Qg typ.26 nCQsw typ. Low QG and QSW for Better THD and Improved 11 nCRG(int) typ. 2.7 EfficiencyTJ max175 C Low QRR for Better THD and Lower EMI

 8.2. Size:272K  infineon
 irfb5615pbf.pdf

IRFB5620PBF IRFB5620PBF

PD - 96173DIGITAL AUDIO MOSFETIRFB5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m32 Low RDSON for Improved Efficiency Qg typ.26 nCQsw typ. Low QG and QSW for Better THD and Improved 11 nCRG(int) typ. 2.7 EfficiencyTJ max175 C Low QRR for Better THD and Lower EMI

 8.3. Size:245K  inchange semiconductor
 irfb5615.pdf

IRFB5620PBF IRFB5620PBF

isc N-Channel MOSFET Transistor IRFB5615IIRFB5615FEATURESStatic drain-source on-resistance:RDS(on) 39mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top