IRLW610A Todos los transistores

 ..1. Size:234K  fairchild semi
 irlw610a irli610a.pdf

IRLW/I610A FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 150 C Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 1.185 (Typ.) 1 1 2 3 3 1. Gate 2. Drain

 ..2. Size:911K  samsung
 irlw610a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 1.185 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute

 9.1. Size:204K  1
 irli620a irlw620a.pdf

 9.2. Size:201K  1
 irli640a irlw640a.pdf

 9.3. Size:226K  fairchild semi
 irlw630a irli630a.pdf

IRLW/I630A FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 150 C Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.335 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3

 9.4. Size:983K  samsung
 irlw640a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolut

 9.5. Size:1006K  samsung
 irlw630a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.335 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M

 9.6. Size:929K  samsung
 irlw620a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.609 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M