IRLW610A Datasheet. Specs and Replacement

Type Designator: IRLW610A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO263

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IRLW610A substitution

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IRLW610A datasheet

 ..1. Size:234K  fairchild semi
irlw610a irli610a.pdf pdf_icon

IRLW610A

IRLW/I610A FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 150 C Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 1.185 (Typ.) 1 1 2 3 3 1. Gate 2. Drain... See More ⇒

 ..2. Size:911K  samsung
irlw610a.pdf pdf_icon

IRLW610A

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 1.185 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute... See More ⇒

 9.1. Size:204K  1
irli620a irlw620a.pdf pdf_icon

IRLW610A

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 9.2. Size:201K  1
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IRLW610A

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Detailed specifications: IRLU2905, IRLU3103, IRLU3303, IRLU3410, IRLW510A, IRLW520A, IRLW530A, IRLW540A, IRFP460, IRLW620A, IRLW630A, IRLW640A, IRLWZ14A, IRLWZ24A, IRLWZ34A, IRLWZ44A, IRLZ10

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