IRLW610A
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLW610A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 3.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.1
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 35
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
TO263
IRLW610A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLW610A
Datasheet (PDF)
..1. Size:234K fairchild semi
irlw610a irli610a.pdf 
IRLW/I610AFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 150C Operating Temperature2 Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 1.185 (Typ.)112331. Gate 2. Drain
..2. Size:911K samsung
irlw610a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute
9.3. Size:226K fairchild semi
irlw630a irli630a.pdf
IRLW/I630AFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 150C Operating Temperature2 Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.335 (Typ.)112331. Gate 2. Drain 3
9.4. Size:983K samsung
irlw640a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 18 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut
9.5. Size:1006K samsung
irlw630a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.335 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute M
9.6. Size:929K samsung
irlw620a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.609 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute M
Datasheet: IRLU2905
, IRLU3103
, IRLU3303
, IRLU3410
, IRLW510A
, IRLW520A
, IRLW530A
, IRLW540A
, IRF640
, IRLW620A
, IRLW630A
, IRLW640A
, IRLWZ14A
, IRLWZ24A
, IRLWZ34A
, IRLWZ44A
, IRLZ10
.
