IRFB9N65APBF Todos los transistores

 ..1. Size:156K  international rectifier
 irfb9n65apbf.pdf

PD - 95416 IRFB9N65APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) 650V 0.93 8.5A l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and TO-22

 5.1. Size:102K  international rectifier
 irfb9n65a.pdf

PD - 91815C SMPS MOSFET IRFB9N65A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 8.5A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre

 5.2. Size:223K  vishay
 irfb9n65a sihfb9n65a.pdf

IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement Available RDS(on) ( )VGS = 10 V 0.93 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 48 COMPLIANT Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 19 and Current Configu

 5.3. Size:285K  inchange semiconductor
 irfb9n65a.pdf

iscN-Channel MOSFET Transistor IRFB9N65A FEATURES Low drain-source on-resistance RDS(ON) =0.93 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU