IRFBA1404PPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFBA1404PPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 206 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 1680 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
Encapsulados: TO-273AA
Búsqueda de reemplazo de IRFBA1404PPBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRFBA1404PPBF datasheet
irfba1404ppbf.pdf
PD - 95903A IRFBA1404PPbF HEXFET Power MOSFET Typical Applications Industrial Motor Drive D VDSS = 40V Benefits RDS(on) = 3.7m l Advanced Process Technology G l Ultra Low On-Resistance ID = 206A l Increase Current Handling Capability S l 175 C Operating Temperature l Fast Switching l Dynamic dv/dt Rating l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Descri
irfba1404.pdf
PD - 93806 AUTOMOTIVE MOSFET IRFBA1404P Typical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electric Power Steering (EPS) Electric Braking D VDSS = 40V Radiator Fan Control Benefits Advanced Process Technology RDS(on) = 3.7m Ultra Low On-Resistance G Increase Current Handling Capability ID = 206A 175 C Operating Temperature S Fast Switchi
irfba1405p.pdf
PD -94111 AUTOMOTIVE MOSFET IRFBA1405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control VDSS = 55V Power Door Benefits Advanced Process Technology RDS(on) = 5.0m Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 174AV 175 C Operating Temperature S Fast Switching Repetitiv
auirfba1405.pdf
PD-97768 AUTOMOTIVE GRADE AUIRFBA1405 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 4.3m l Dynamic dv/dt Rating l 175 C Operating Temperature max 5.0m G l Fast Switching ID (Silicon Limited) 174A l Fully Avalanche Rated ID (Package Limited) 95A l Repetitive Avalanche Allowed S up to Tjmax l Lead-Free, RoHS
Otros transistores... IRFB52N15DPBF , IRFB5615PBF , IRFB5620PBF , IRFB59N10DPBF , IRFB61N15DPBF , IRFB9N30APBF , IRFB9N60APBF , IRFB9N65APBF , IRFZ46N , IRFBA1405PPBF , IRFBA22N50APBF , IRFBA90N20DPBF , IRFBC20LPBF , IRFBC20PBF , IRFBC30AL , IRFBC30ALPBF , IRFBC30APBF .
History: ZXMHC6A07T8 | L1N60 | WSP4445 | WSP4812
History: ZXMHC6A07T8 | L1N60 | WSP4445 | WSP4812
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
2sc2238 | 2sc458 transistor | b649a transistor | 2sa606 | 2n3644 | 2sc2240bl | 2sc1913 | c2314 transistor