IRFBA1404PPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFBA1404PPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 206 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 160 nC
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 1680 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
Paquete / Cubierta: TO-273AA
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IRFBA1404PPBF Datasheet (PDF)
irfba1404ppbf.pdf
PD - 95903AIRFBA1404PPbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 40VBenefitsRDS(on) = 3.7ml Advanced Process TechnologyGl Ultra Low On-ResistanceID = 206Al Increase Current Handling CapabilitySl 175C Operating Temperaturel Fast Switchingl Dynamic dv/dt Ratingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescri
irfba1404ppbf.pdf
PD - 95903AIRFBA1404PPbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 40VBenefitsRDS(on) = 3.7ml Advanced Process TechnologyGl Ultra Low On-ResistanceID = 206Al Increase Current Handling CapabilitySl 175C Operating Temperaturel Fast Switchingl Dynamic dv/dt Ratingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescri
irfba1404.pdf
PD - 93806AUTOMOTIVE MOSFETIRFBA1404PTypical ApplicationsHEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electric Power Steering (EPS) Electric BrakingDVDSS = 40V Radiator Fan ControlBenefits Advanced Process TechnologyRDS(on) = 3.7m Ultra Low On-ResistanceG Increase Current Handling CapabilityID = 206A 175C Operating TemperatureS Fast Switchi
irfba1405p.pdf
PD -94111AUTOMOTIVE MOSFETIRFBA1405PTypical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper ControlD Climate ControlVDSS = 55V Power DoorBenefits Advanced Process TechnologyRDS(on) = 5.0m Ultra Low On-ResistanceG Dynamic dv/dt RatingID = 174AV 175C Operating TemperatureS Fast Switching Repetitiv
auirfba1405.pdf
PD-97768AUTOMOTIVE GRADEAUIRFBA1405HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS 55Vl Low On-ResistanceRDS(on) typ. 4.3ml Dynamic dv/dt Ratingl 175C Operating Temperature max 5.0mGl Fast SwitchingID (Silicon Limited) 174Al Fully Avalanche RatedID (Package Limited) 95Al Repetitive Avalanche Allowed Sup to Tjmaxl Lead-Free, RoHS
irfba1405ppbf.pdf
PD -95152AIRFBA1405PPbFTypical Applications Industrial Motor Drive HEXFET Power MOSFETDBenefitsVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.0ml Dynamic dv/dt RatingGl 175C Operating Temperaturel Fast Switching ID = 174ASl Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFETs uti
irfba1405ppbf.pdf
PD -95152AIRFBA1405PPbFTypical Applications Industrial Motor Drive HEXFET Power MOSFETDBenefitsVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.0ml Dynamic dv/dt RatingGl 175C Operating Temperaturel Fast Switching ID = 174ASl Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFETs uti
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
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