Справочник MOSFET. IRFBA1404PPBF

 

IRFBA1404PPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFBA1404PPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 206 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 160 nC
   trⓘ - Время нарастания: 140 ns
   Cossⓘ - Выходная емкость: 1680 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
   Тип корпуса: TO-273AA

 Аналог (замена) для IRFBA1404PPBF

 

 

IRFBA1404PPBF Datasheet (PDF)

 ..1. Size:199K  international rectifier
irfba1404ppbf.pdf

IRFBA1404PPBF
IRFBA1404PPBF

PD - 95903AIRFBA1404PPbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 40VBenefitsRDS(on) = 3.7ml Advanced Process TechnologyGl Ultra Low On-ResistanceID = 206Al Increase Current Handling CapabilitySl 175C Operating Temperaturel Fast Switchingl Dynamic dv/dt Ratingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescri

 ..2. Size:199K  infineon
irfba1404ppbf.pdf

IRFBA1404PPBF
IRFBA1404PPBF

PD - 95903AIRFBA1404PPbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 40VBenefitsRDS(on) = 3.7ml Advanced Process TechnologyGl Ultra Low On-ResistanceID = 206Al Increase Current Handling CapabilitySl 175C Operating Temperaturel Fast Switchingl Dynamic dv/dt Ratingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescri

 5.1. Size:115K  international rectifier
irfba1404.pdf

IRFBA1404PPBF
IRFBA1404PPBF

PD - 93806AUTOMOTIVE MOSFETIRFBA1404PTypical ApplicationsHEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electric Power Steering (EPS) Electric BrakingDVDSS = 40V Radiator Fan ControlBenefits Advanced Process TechnologyRDS(on) = 3.7m Ultra Low On-ResistanceG Increase Current Handling CapabilityID = 206A 175C Operating TemperatureS Fast Switchi

 6.1. Size:238K  international rectifier
irfba1405p.pdf

IRFBA1404PPBF
IRFBA1404PPBF

PD -94111AUTOMOTIVE MOSFETIRFBA1405PTypical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper ControlD Climate ControlVDSS = 55V Power DoorBenefits Advanced Process TechnologyRDS(on) = 5.0m Ultra Low On-ResistanceG Dynamic dv/dt RatingID = 174AV 175C Operating TemperatureS Fast Switching Repetitiv

 6.2. Size:211K  international rectifier
auirfba1405.pdf

IRFBA1404PPBF
IRFBA1404PPBF

PD-97768AUTOMOTIVE GRADEAUIRFBA1405HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS 55Vl Low On-ResistanceRDS(on) typ. 4.3ml Dynamic dv/dt Ratingl 175C Operating Temperature max 5.0mGl Fast SwitchingID (Silicon Limited) 174Al Fully Avalanche RatedID (Package Limited) 95Al Repetitive Avalanche Allowed Sup to Tjmaxl Lead-Free, RoHS

 6.3. Size:213K  international rectifier
irfba1405ppbf.pdf

IRFBA1404PPBF
IRFBA1404PPBF

PD -95152AIRFBA1405PPbFTypical Applications Industrial Motor Drive HEXFET Power MOSFETDBenefitsVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.0ml Dynamic dv/dt RatingGl 175C Operating Temperaturel Fast Switching ID = 174ASl Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFETs uti

 6.4. Size:216K  infineon
irfba1405ppbf.pdf

IRFBA1404PPBF
IRFBA1404PPBF

PD -95152AIRFBA1405PPbFTypical Applications Industrial Motor Drive HEXFET Power MOSFETDBenefitsVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.0ml Dynamic dv/dt RatingGl 175C Operating Temperaturel Fast Switching ID = 174ASl Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFETs uti

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