AM1430N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM1430N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.56 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 165 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
Paquete / Cubierta: SC-70
Búsqueda de reemplazo de AM1430N MOSFET
AM1430N Datasheet (PDF)
am1430n.pdf

Analog Power AM1430NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 4.3battery-powered products such
am1432ne.pdf

Analog Power AM1432NEN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.033 @ VGS = 10 V 5.7battery-powered products su
am1433pe.pdf

Analog Power AM1433PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.064 @ VGS = -10V -4.1converters and power management in portable and -30battery-powered produc
am1434n.pdf

Analog Power AM1434NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.035 @ VGS = 4.5 V 5.5battery-powered products su
Otros transistores... AM1330N , AM1331P , AM1340N , AM1360NE , AM1370N , AM1400NE , AM1420N , AM1421P , IRFB4227 , AM1431P , AM1432NE , AM1433PE , AM1434N , AM1440N , AM1523CE , AM1535CE , AM1537CE .
History: PSMN017-30PL
History: PSMN017-30PL



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
13n10 mosfet | 2n3565 transistor | datasheet irfz44n | 2sd1047 transistor | mj802 | bu508a | bc560c | ksa1220ay