AM1430N. Аналоги и основные параметры

Наименование производителя: AM1430N

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.56 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 24 ns

Cossⓘ - Выходная емкость: 165 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm

Тип корпуса: SC-70

Аналог (замена) для AM1430N

- подборⓘ MOSFET транзистора по параметрам

 

AM1430N даташит

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 am1430n.pdf pdf_icon

AM1430N

Analog Power AM1430N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 4.3 battery-powered products such

 9.1. Size:100K  analog power
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AM1430N

Analog Power AM1432NE N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.033 @ VGS = 10 V 5.7 battery-powered products su

 9.2. Size:64K  analog power
 am1433pe.pdf pdf_icon

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Analog Power AM1433PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.064 @ VGS = -10V -4.1 converters and power management in portable and -30 battery-powered produc

 9.3. Size:53K  analog power
 am1434n.pdf pdf_icon

AM1430N

Analog Power AM1434N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.035 @ VGS = 4.5 V 5.5 battery-powered products su

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